The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A method for treating surface of substrate, the method including forming a film including a high molecular weight condensate of a silylation agent on the surface thereof to allow a substrate having a plurality of regions to be modified at modification degrees that are different depending on materials of the regions on a surface of the substrate. The method includes preparing a substrate having a surface including two or more regions having different materials; exposing the surface to a surface treatment agent; and baking the substrate, the method not including rinsing the surface with a liquid between the exposing and the baking, the surface treatment agent including a silylation agent and not a nitrogen-containing heterocyclic compound, the silylation agent including organomonosilane that has 2 to 4 nitrogen atoms bonded to a silicon atom.

A semiconductor device manufacturing method includes: forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess; performing a predetermined process on the substrate on which the organic film is formed in the recess; and removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film. The amine and the isocyanate have a terminal bifunctional linear chain structure having two functional groups at both ends of a linear chain. At least one of the amine or the isocyanate has side chains connected to the linear chain contained in the linear chain structure.

An upper layer film-forming composition exhibits good solubility in hydrophobic solvents and can bring about vertical alignment of a block copolymer without dissolution, swelling or the like of a layer containing the block copolymer formed on a substrate. This upper layer film-forming composition is used for phase separation of a layer containing a block copolymer formed on a substrate, and contains: (A) a copolymer containing a unit structure derived from a maleimide structure (a) and a unit structure derived from a styrene structure; and (B) as a solvent, a non-aromatic hydrocarbon compound that is a liquid at normal temperature and pressure.

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and applying a base composition to the photoresist layer, the base composition includes non-organic base, organic base, thermal base generator, or photobase generator. The photoresist layer is selectively exposed to actinic radiation to form latent pattern. The latent pattern is developed by applying developer composition to selectively exposed photoresist layer to form pattern in photoresist layer. The base composition is applied to photoresist layer during one or more operations selected from group consisting of applying base composition to substrate as underlayer before photoresist layer is formed and the composition is subsequently absorbed by photoresist layer, a pre-exposure baking operation, after photoresist layer is selectively exposed and before developing latent pattern, and after developing latent pattern.

Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.

A process of area selective deposition (ASD), a process of atomic layer deposition (ALD), and a process of device fabrication include forming a passivation layer on a metal surface of a substrate and forming a surface-bound polymer film on a dielectric surface of the substrate. The forming the passivation layer includes binding metal-selective inhibitor molecules to the metal surface. A device is formed in a process that includes forming a passivation layer on a metal surface of a substrate and forming a surface-bound polymer film on a dielectric surface of the substrate. The forming the passivation layer includes binding metal-selective inhibitor molecules to the metal surface. A composition for area selective deposition (ASD) includes a metal-selective inhibitor molecule have the following structure:

##STR00001##

wherein X is a metal-binding group, R is an organic ligand, and n is an integer greater than or equal to zero.

Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

A method and corresponding spin coater is provided for forming a layer of uniform thickness on a semiconductor wafer having a central region and an outer edge. The method includes: depositing a flowable coating material on the semiconductor wafer at the central region, the layer being formed from the coating material; rotating the semiconductor wafer about an axis such that a centrifugal force urges the coating material to spread from the central region toward the outer edge of the semiconductor wafer; and creating a pressure differential in one or more regions proximate to the outer edge of the semiconductor wafer. The pressure differential may be created by a wall with pins holes, the wall at least partially encircling the outer edge of the semiconductor wafer.