A chip includes a die; and a first dielectric layer disposed on a side of the die, and a plurality of bonding devices that penetrate the first dielectric layer. The plurality of bonding devices include a first bonding device and a second bonding device that are adjacent to each other, a channel between the first bonding device and the second bonding device is formed at the first dielectric layer, and a dielectric constant of the channel is less than a dielectric constant of a material of the first dielectric layer.

The present disclosure provides a method of fabricating radio frequency (RF) circuits using three-dimensional (3D), hybrid wafer-level bonded wafers. In one aspect, a first, bottom silicon-on-insulator (SOI) wafer and a second, top SOI wafer are provided. Complementary metal-oxide semiconductor processing is then performed on both the first and second SOI wafers to fabricate transistors and form RF circuits on each wafer. The second wafer is then bonded to the first wafer to electrically couple the RF circuits together. In an aspect, the 3D fabrication method enables RF circuits that are designed using transistor structures stacked in a three-dimensional (3D) folded configuration using a plurality of wafers. In one aspect, the RF circuit uses mirrored portions that are folded together during the wafer bonding process. In another aspect, the RF circuit uses asymmetric portions between the top versus bottom wafers.

Systems, devices, and manufacturing methods of a semiconductor device are provided. In one aspect, a semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a memory array. The memory array includes a first memory subarray and a second memory subarray stacked along a first direction. A first row of memory cells of the first memory subarray and a first row of memory cells of the second memory subarray are coupled to a same bit line. The same bit line is between the first memory subarray and the second memory subarray along the first direction. The second semiconductor structure includes a control circuitry coupled to the memory array. The semiconductor device includes a second via structure that is coupled to the pad-out structure of the second semiconductor structure through the first via structure and the interconnection structure.

A memory device, which receives a vehicle status mode command from a host and executes background jobs based on the received vehicle status mode command, includes a command executor configured to generate a command on the background jobs based on the received vehicle status mode command, a scheduler configured to receive the command on the background jobs, determine whether a vehicle status is a status in which the background jobs are able to be executed, and generate the background jobs based on a determination result, and a background job executor configured to execute the background jobs generated by the scheduler.

A microelectronic device comprises a first microelectronic device structure, a second microelectronic device structure vertically neighboring the first microelectronic device structure, and a third microelectronic device structure vertically neighboring the second microelectronic device structure. The first microelectronic device structure comprises a first memory array region and the third microelectronic device structure comprises a second memory array region. The second microelectronic device structure comprises a control logic region comprising a first sub word liner driver region comprising transistor structures in electrical communication with structures of the first microelectronic device structure and a second sub word line driver region comprising additional transistor structures in electrical communication with structures of the third microelectronic device structure. Related microelectronic devices, electronic systems, and methods are also described.

A semiconductor storage device includes first and second chips. The first chip includes a first semiconductor substrate, first conductive layers arranged in a first direction and extending in a second direction, a semiconductor column extending in the first direction and facing the first conductive layers, a first charge storage film formed between the first conductive layers and the semiconductor column, a plurality of first transistors on the first semiconductor substrate, and first bonding electrodes electrically connected to a portion of the plurality of first transistors. The second chip includes a second semiconductor substrate, a plurality of second transistors on the second semiconductor substrate, and second bonding electrodes electrically connected to a portion of the plurality of second transistors, and bonded to the first bonding electrodes. A thickness of the second semiconductor substrate in the first direction is smaller than a thickness of the first semiconductor substrate in the first direction.

A semiconductor package includes: a first semiconductor chip including a plurality of first through-electrodes and a plurality of first shared electrodes, wherein the first through-electrodes are arranged in a first direction, wherein the plurality of first shared electrodes are spaced apart from the plurality of first through-electrodes in a second direction, intersecting the first direction, and are electrically connected to the plurality of first through-electrodes, respectively; and a second semiconductor chip including a plurality of second through-electrodes and a plurality of second shared electrodes, wherein the plurality of second through-electrodes are disposed on the first semiconductor chip and are arranged in the first direction, wherein the plurality of second shared electrodes are spaced apart from the plurality of second through-electrodes in the second direction and are electrically connected to the plurality of second through-electrodes, respectively.

A semiconductor structure includes an alternating stack of insulating layers and composite layers, each of the composite layers includes a plurality of electrically conductive word line strips and a plurality of dielectric isolation structures, and each of the insulating layers has an areal overlap with each electrically conductive word line strip and each dielectric isolation structure within the composite layers within a memory array region in a plan view along a vertical direction, rows of memory openings arranged along the first horizontal direction, where each row of memory openings of the rows of memory openings vertically extends through each insulating layer within the alternating stack and one electrically conductive strip for each of the composite layers, and rows of memory opening fill structures located within the rows of memory openings, where each of the memory opening fill structures includes a vertical stack of memory elements and a vertical semiconductor channel.

A semiconductor storage device of an embodiment includes a substrate, a plurality of first conductive layers, pillar, and a second conductive layer. The plurality of first conductive layers are provided above the substrate, and mutually separated in a first direction. The pillar is provided to penetrate the plurality of the first conductive layers, and includes a first semiconductor layer extending in the first direction. A part of the pillar that intersects with the first conductive layers are functioned as memory cells. The second conductive layer is provided above the plurality of first conductive layers and is in contact with the first semiconductor layer. The second conductive layer is made of a metal or a silicide.

Disclosed herein is an electronic component that includes a mounting surface having a terminal formation area and a plurality of terminal electrodes arranged in an array in the terminal formation area. The center point of the terminal formation area is offset with respect to the center point of the mounting surface. Thus, at mounting of the electronic component on a mounting substrate, a solder paste is supplied to a land pattern, and then the mounting is performed such that the center point of a mounting area and the center point of the mounting surface coincide with each other, whereby a predetermined displacement occurs between the planar positions of the land pattern and terminal electrode. This allows a void inside the solder to be released outside without involving a layout change of the land pattern.