A package comprises an interposer, comprising an interposer substrate including at least one layer, and a plurality of RDLs formed through at least a portion of the interposer substrate. The package also includes a die device structure comprising at least one device die, and a first test line (TL) structure interposed between the interposer and the die device structure. The first TL structure includes at least one first test line electrically coupled to the at least one device die, at least a portion of the at least one first test line extending beyond a peripheral edge of the die device structure to provide an electrical interface with the at least one device die.

A semiconductor structure and a formation method thereof are provided. The semiconductor structure includes a substrate, a word line, a bit line conductive layer, a detection element, and an opening. The substrate includes a plurality of active regions and an isolation region surrounding the plurality of active regions. The word line is disposed in the substrate and is disposed in the plurality of active regions. The bit line conductive layer is disposed on the word line. The detection element is disposed in the isolation region. The opening penetrates through the bit line conductive layer and exposes the word line and the plurality of active regions, wherein the opening is in contact with the detection element.

Semiconductor devices with die overthinning detection circuitry (and associated systems, devices, and methods) are disclosed herein. In one embodiment, a semiconductor die includes a substrate, a triple well structure positioned at least partially within the substrate, and circuitry. The triple well structure can form a depletion region within the substrate, and the circuitry can be configured to capture a measurement of an amount of leakage current from the depletion region while a reverse bias is applied across the triple well structure. In some embodiments, the reverse bias can be applied across the triple well structure using part of a metallization die border of the semiconductor die. In these and other embodiments, measurement of the amount of leakage current can be used to detect that the semiconductor die is defective (e.g., overthinned, overpolished).

A semiconductor wafer comprising a first die including a first integrated circuit having a trimmable or programmable component. The trimmable or programmable component is configured to be trimmed or permanently altered in response to an electrical signal. The semiconductor wafer also includes a saw street arranged adjacent to the first die, and at least one probe pad electrically connected to the trimmable or programmable component. The at least one probe pad is arranged in the saw street.

A detection method for a semiconductor structure, which includes providing a test element group. The test element group includes a plurality of isolation structures and a first word line and a second word line disposed in each of the isolation structures. The first word line and the second word line are on opposite sides of each of the isolation structures. The detection method further includes performing a first etching process on the test element group to remove the upper portion of the isolation structures and expose the top surface of active regions of the test element group. The detection method further includes performing a second etching process on the test element group, and the second etching process is a wet etching process. The detection method further includes performing a defect test on the test element group to determine whether the test element group contains a word line defect.

An example apparatus includes a semiconductor substrate having a front surface on which an internal circuit is formed and a back surface opposite to the front surface, a first TSV penetrating the semiconductor substrate, and a first back side pad on the back surface of the semiconductor substrate and coupled to the first TSV The internal circuit includes an internal test node. The first back side pad is coupled to the internal test node of the internal circuit via the first TSV.

An integrated circuit package includes a substrate, a semiconductor interposer on the substrate, and a first integrated circuit chip on the interposer. The interposer includes a galvanic effect test structure including a test contact pad and a detection contact pad. The interposer includes a plurality of primary contact pads electrically coupled to the first integrated circuit chip. The galvanic effect structure can be utilized to test the interposer for galvanic corrosion prior to assembling the interposer into the integrated circuit package.

A method of forming a semiconductor device includes: forming a conductive pad over and electrically coupled to an interconnect structure, where the interconnect structure is disposed over a substrate and electrically coupled to electrical components formed on the substrate; forming a passivation layer over the conductive pad and the interconnect structure; and forming a sacrificial test structure over the passivation layer and electrically coupled to the conductive pad, where the sacrificial test structure includes a sacrificial pad extending along an upper surface of the passivation layer distal from the substrate, and includes a sacrificial via extending into the passivation layer and contacting the conductive pad.

A display device includes a display panel including a display area in which a plurality of pixels and a plurality of pixel driving circuits which drive each pixel are formed, and a non-display area in which the pixels are not formed, wherein at least one dummy driving circuit unit is formed on one side of the non-display area in a manner of being substantially the same as the pixel driving circuit.

A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes a first wafer structure and at least one die stack layer stacked on a second side of the first wafer structure. The die stack has first test pad and second test pad, which can be used to test and screen the die in the die stack and the die stack, contributing to increased yield of the semiconductor device. Additionally, metal pad may be formed on a first side of the first wafer structure before the die stack is stacked on the first wafer structure, avoiding warpage or other distortion possibly otherwise caused by high-temperature treatment if they are formed after the die stack is stacked. This facilitates stacking of more dies and/or wafers together. The semiconductor device is obtainable according to the method.