A component in a semiconductor processing chamber is provided. An electrically conductive semiconductor or metal body has a CTE of less than 10.010.sup.6/K. An intermediate layer is disposed over at least one surface of the body, the intermediate layer comprising a fluoropolymer. A perfluoroalkoxy alkane (PFA) layer is disposed over the intermediate layer to form the component.

A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer above a wafer placement device having a plate to align an edge of the semiconductor wafer with a first buffer member positioned in a peripheral region of the plate and to align a center of the semiconductor wafer with a second buffer member positioned in a central region of the plate. Each of the first buffer member and the second buffer member has a stiffness that is less than that of the plate. The method further includes lowering down the semiconductor wafer to place the semiconductor wafer over the plate.

A ceramic substrate includes a base body, and an electrical conductor pattern embedded in the base body. The base body is composed of ceramics. The electrical conductor pattern has, as a main component, a solid solution having a body-centered cubic lattice structure in which copper is solid-dissolved in tungsten.

Provided is an apparatus for processing a substrate, which includes a chamber having a processing space in which a process of depositing a thin-film on a substrate is performed and a structure which is installed to expose at least one surface to the processing space and in which a coating layer made of a polymer forming at least one of covalent bond and double bond at an end tail is formed on the surface exposed to the processing space. Thus, the substrate processing apparatus in accordance with an exemplary embodiment may restrict or prevent particle generation and substrate pollution generation caused by a thin-film deposited in the chamber. Also, a period of cleaning the chamber and a structure or a component in the chamber may be extended. Thus, a product yield rate and an apparatus operation efficiency may improve.

An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

Embodiments described herein relate to substrate holder systems. An apparatus includes a base structure of a substrate holder, a passivation layer formed on a surface of the base structure, and a diamond-like carbon (DLC) coating formed on the passivation layer. The substrate holder is to receive a substrate. The passivation layer provides corrosion resistance for the substrate holder with respect to at least one process chemistry. The DLC coating provides wear resistance for the substrate holder.

A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.

A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base provided on a bottom surface side of the ceramic base, and a refrigerant flow channel groove provided in the cooling base so as to open at a bottom surface of the cooling base.

A lithographic apparatus substrate table comprises a plurality of first projections, whereby the first projections define a first substrate supporting plane and a plurality of second projections, whereby the second projections define a second substrate supporting plane. The substrate table further comprises a clamping device configured to exert a clamping force onto the substrate. The second substrate supporting plane is parallel to the first substrate supporting plane. The second substrate supporting plane is offset in respect of the first substrate supporting plane in a direction perpendicular to the first and second substrate supporting planes. The lithographic apparatus substrate table is configured to support the substrate on the second projections at the second substrate supporting plane before application of the clamping force by the clamping device. The second projections are configured to deform upon application by the clamping device of the clamping force onto the substrate, thereby providing the substrate to move from the second substrate supporting plane to the first substrate supporting plane when clamped by the clamping device.