Improved breakdown test structures are provided. In some embodiments, multiple test structures may be combined into a single (e.g., two-terminal) test structure for monitoring interconnect voltage breakdown (VBD) of representative interconnect structures within scribe line regions.

A probe card for testing or trimming or programming a semiconductor wafer including a first die including a first integrated circuit having a trimmable or programmable component. The probe card including at least one probe arranged to make electrical contact with at least one probe pad arranged on the wafer. The at least one probe pad being electrically connected to the trimmable or programmable component and being arranged in a saw street of the wafer.

Provided is a semiconductor structure, a test structure, a manufacturing method and a test method. The semiconductor structure includes a substrate, which includes multiple pillars spaced along a first direction by first trenches; second trenches formed at opposite sides along a second direction of each of the pillars; target conductive structures extending along the second direction in the substrate directly below adjacent second trenches; and a first dielectric layer, a conductive layer and a second dielectric layer sequentially stacked in the first trenches and the second trenches. A depth of the first trenches is greater than that of the second trenches. The first direction intersects the second direction.

A method for manufacturing an epitaxial substrate includes the steps of: epitaxially growing a group III nitride semiconductor layer on a substrate; removing the substrate from a growth furnace; irradiating a surface of the group III nitride semiconductor layer with ultraviolet light while exposing the surface to an atmosphere containing oxygen; and measuring a sheet resistance value of the group III nitride semiconductor layer.

A method includes pressing probes against probe pads on a test line over a substrate at a first position on the probe pads to form first probe marks on the probe pads; capturing first images of the first probe marks on the probe pads; transmitting the captured first images of the first probe marks to an image inspection machine; identifying the first probe marks from the probe pads of the captured first images through the image inspection machine; determining whether the identified first probe marks are acceptable through the image inspection machine; in response to the determination determines that the identified first probe marks are acceptable, performing a first wafer acceptance test (WAT) to the substrate with the probes at the first position.

A wafer probe test system has a conductive needle configured to contact a conductive feature on a surface of a wafer, and a fluid probe having a multichannel tube, the fluid probe configured to engage the surface of the wafer to form a fluidic seal between a sensor face on the surface of the wafer and the conductive feature of the wafer, the multichannel tube having a first channel and a second channel configured to create a flow of fluid across the sensor face on the surface of the wafer.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

One example discloses a test-point access structure within a semiconductor, including: a target test-point configured to be coupled to a circuit within the semiconductor; a first doped region within the semiconductor configured to generate a first signal in response to an energy beam transmitted by a circuit editing (CE) tool; a second doped region within the semiconductor configured to generate a second signal in response to the energy beam transmitted by the CE tool; and a target pad coupling the target test-point to the first doped region; wherein the CE tool is configured to remove material from the semiconductor in response to the first signal and the second signal.

Provided is a test apparatus for a semiconductor device which enhances the reliability of a test on electrical characteristics. The test apparatus includes a stage, a probe holder, probes, a wind protection wall, and a gas supply part. The stage is capable of holding a semiconductor wafer in which the semiconductor device is formed. The probe holder is disposed above the stage. The probes each include a tip contactable with the semiconductor device, and are held by the probe holder. The wind protection wall circumferentially surrounds the probes. The gas supply part is disposed outside the wind protection wall. The gas supply part supplies gas in a direction toward the stage. Each of the probes includes an inner part closer to a base end than to the tip. The inner parts are contained in a wind protection space surrounded by the wind protection wall.

The present invention relates to sensors comprising pattern illumination-based annealed coated substrate and one or more functional molecules and process of using same. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film and to which one or more functional molecules can be attached to yield a sensor. In addition, such process does not require large-scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized. The resulting sensors provide a sensing capability that is as good as or better than current sensors and can be tailored to sense specific biomaterials and/or chemicals.