Metallization interconnect structures, integrated circuit devices, and methods related to high aspect ratio interconnects are discussed. A self assembled monolayer is selectively formed on interlayer dielectric sidewalls of an opening that exposes an underlying metallization structure. A first metal is formed on the underlying metallization structure and within only a bottom portion of the self assembled monolayer. The exposed portion of the self assembled monolayer is removed and a second metal is formed over the first metal.

A structure includes a transistor including a first source/drain region, a source/drain contact plug over and electrically coupling to the first source/drain region, and a via over and contacting the source/drain contact plug. The via has a bottom portion having a first length, and an upper portion having a second length. The first length is greater than the second length. Both of the first length and the second length are measured in a same direction parallel to a top surface of the source/drain contact plug.

Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

Provided is a semiconductor device including a substrate, a source/drain area on the substrate, a first interlayer insulating film on the substrate, a contact plug penetrating at least a portion of the first interlayer insulating film along a first direction perpendicular to a surface of the substrate and electrically connected to the source/drain area, a second interlayer insulating film on the first interlayer insulating film, a wiring via penetrating a portion of the second interlayer insulating film along the first direction and electrically connected to the contact plug, a wiring line penetrating at least a portion of the second interlayer insulating film along the first direction and electrically connected to the wiring via, and a protecting film between the wiring via and the second interlayer insulating film and between the wiring line and the second interlayer insulting film.

A microelectronic device includes a stack structure including blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. The blocks including a stadium structure including opposing staircase structures each having steps comprising edges of the tiers. The blocks further include a filled trench vertically overlying and within horizontal boundaries of the stadium structure. The filled trench includes dielectric liner structures and additional dielectric liner structures having a different material composition than that of the dielectric liner structures and alternating with the dielectric liner structures. The filled trench also includes dielectric fill material overlying an alternating sequence of the dielectric liner structures and additional dielectric liner structures.

A method of manufacturing a semiconductor structure is provided by embodiments of this disclosure, and the method includes the following steps. An insulating area and an active area are formed in a substrate. A first word line trench is formed in the active area. A first dielectric layer is deposited in the first word line trench and on the active area and the insulating area. A second word line trench is formed through etching the first dielectric layer. Besides, the second word line trench is linear and extends through the insulating area and the active area of the substrate, and a portion of the first dielectric layer is remained in a bottom of the second word line trench. Then, a word line structure is formed in the second word line trench. Moreover, a semiconductor structure is provided in this disclosure.

A semiconductor device includes an interconnect structure including a dielectric structure. The dielectric structure includes a metal-organic dielectric layer, an air gap and an insulating sustaining layer. The insulating sustaining layer surrounds the metal-organic dielectric layer and the insulating sustaining layer is disposed between the metal-organic dielectric layer and the air gap.

Embodiments relate to backside contact and backside isolation. An aspect includes a semiconductor structure having channel regions connected to a first source/drain region and a second source/drain region and a backside contact disposed under the first source/drain region. An aspect includes a liner vertically extending from a backside of the second source/drain region, the liner protecting the backside of the second source/drain region from contact with the backside contact.

A semiconductor device includes: a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and an isolation layer comprising a first portion and a second portion, wherein the first portion of the isolation layer lines the sidewalls of the first portion of the first conductive structure, and the second portion of the isolation layer lines at least a portion of the bottom surface of the first portion of the first conductive structure.

A semiconductor storage device includes a base body, a stacked body, a plurality of columns, and a plurality of first contacts. The base body includes a substrate, a semiconductor element on the substrate, a lower wiring layer above the semiconductor element in a thickness direction of the base body and connected to the semiconductor element, and a lower conductive layer above the lower wiring layer in the thickness direction. The stacked body is above the lower conductive layer and including an alternating stack of conductive layers and insulating layers. Each of the columns includes a semiconductor body extending through the stacked body and electrically connected to the lower conductive layer. The plurality of first contacts extend through the stacked body and electrically connected to the lower conductive layer. The lower conductive layer is separately provided under each of the plurality of first contacts.