Some embodiments include a method in which a first stack is formed to include a metal-containing first layer, a second layer over the first layer, and a metal-containing third layer over the second layer. A first opening is formed to extend through the second and third layers. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. A second opening is formed through the second stack, and is extended through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack and to the second layer. The second layer is removed to form a conduit. Conductively-doped second semiconductor material is formed within the conduit. Dopant is out-diffused from the conductively-doped second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.

Semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. A top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer. Method of fabricating the semiconductor device can include etching a via into a semiconductor substrate, filling the via with a metal material, forming a metal routing layer subsequent to filling the via, and removing a portion of a bottom of the semiconductor substrate to expose a bottom region of the metal filled via.

A device includes a gate structure, a source/drain structure, a source/drain conductor, a barrier layer, and a dielectric liner layer. The gate structure is over a semiconductor structure and includes a gate dielectric layer and at least one titanium-containing metal layer over the gate dielectric layer. The source/drain structure is adjacent the gate structure and a sidewall of the semiconductor structure. The source/drain conductor is over the source/drain structure. The barrier layer warps around the source/drain conductor. The dielectric liner layer is on a sidewall of the barrier layer. Both the dielectric liner layer and the barrier layer extend into the source/drain structure.

A semiconductor structure includes a substrate; a top metal layer disposed in a top inter-metal dielectric (IMD) layer on the substrate; a first passivation layer covering the top metal layer and the top IMD layer; a pad layer disposed on the first passivation layer and electrically connected to the top metal layer; a spin-on glass (SOG) layer covering the pad layer and the first passivation layer; and a second passivation layer disposed on the SOG layer.

A semiconductor device includes a substrate having an active region; a first insulating layer disposed on the substrate; a second insulating layer disposed on the first insulating layer; a via contact disposed in the first insulating layer and electrically connected to the active region; an interconnection structure disposed in the second insulating layer and electrically connected to the via contact; and an etch stop layer disposed between the first insulating layer and the second insulating layer. The etch stop layer includes an upper layer region, a lower layer region and an intermediate film between the upper layer region and the lower layer region. Each of the upper layer region and the lower layer region includes a compound that includes a first element, and an intermediate film includes a second element intermixed with the first element.

A method for manufacturing an electrical interconnection structure including a step of providing an initial structure including a substrate, an electrically conductive lower element, a cavity formed in the substrate and having an inner wall internally defining an access to the lower element, and an electrically insulating layer; a step of forming an interconnection element in the cavity; and a final polishing step, wherein a portion of the interconnection element and at least one part of the electrically insulating layer are removed simultaneously by chemical-mechanical polishing using a final polishing agent, thereby forming the electrical interconnection structure.

A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a first energy removable structure disposed in the first dielectric layer. The semiconductor device structure also includes a second dielectric layer disposed over the first dielectric layer, and an N.sup.th dielectric layer disposed over the second dielectric layer. The N is an integer greater than 2. The semiconductor device structure further includes a first conductor disposed in the N.sup.th dielectric layer, and an (N+1).sup.th dielectric layer disposed over the N.sup.th dielectric layer. A top surface of the first conductor is exposed by a first opening, and a top surface of the first energy removable structure is exposed by a second opening.

Some embodiments include an integrated assembly having a first memory region, a second memory region offset from the first memory region, and an intermediate region between the first and second memory regions. Channel-material-pillars are arranged within the first and second memory regions. Conductive posts are arranged within the intermediate region. A panel extends across the first memory region, the intermediate region and the second memory region. The panel is between a first memory-block-region and a second memory-block-region. Doped-semiconductor-material is within the first memory region, the second memory region and the intermediate region, and is directly adjacent the panel. The doped-semiconductor-material is at least part of conductive source structures within the first and second memory regions. Insulative rings surround lower regions of the conductive posts and are between the conductive posts and the doped-semiconductor-material. Some embodiments include methods of forming integrated assemblies.

Metal-insulator-metal (MIM) capacitor, an integrated semiconductor device having a MIM capacitor and methods of making. The MIM capacitor includes a first metal layer, a second metal layer and a dielectric layer located between the second metal layer and the first metal layer. The first metal layer, the second metal layer and the dielectric layer may be formed in a comb structure, wherein the comb structure include a first tine structure and at least a second tine structure.

A semiconductor device may include a first film and a second film defining parts of a trench, a plug conductive film, a via, and a wiring in the trench. The trench may include a second sub-trench having a second width below a first sub-trench having a first width. The plug conductive film may extend from a first side of the first film to penetrate a bottom face of the trench. An uppermost face of the plug conducive film may be in the trench. The via may include an insulating liner between the plug conductive film and the first film. The uppermost face of the plug conductive film and at least a part of a side wall of the plug conductive film may be in contact with the wiring. An upper face of the insulating liner may be exposed by a bottom face of the second sub-trench.