Heat sink and heat sink arrangements are provided for an electronic device immersed in a liquid coolant. A heat sink may comprise: a base for mounting on top of a heat-transmitting surface of the electronic device and transferring heat from the heat-transmitting surface; and a retaining wall extending from the base and defining a volume. A heat sink may have a wall arrangement to define a volume, in which the electronic device is mounted. A heat sink may be for an electronic device to be mounted on a surface in a container, in an orientation that is substantially perpendicular to a floor of the container. Heat is transferred from the electronic device to liquid coolant held in the heat sink volume. A cooling module comprising a heat sink is also provided. A nozzle arrangement may direct liquid coolant to a base of the heat sink.

A semiconductor package comprising: a package substrate; an interposer disposed on the package substrate; a first semiconductor chip disposed on the interposer; a heat dissipation device disposed on the first semiconductor chip; and a plurality of cooling patches disposed between the heat dissipation device and the first semiconductor chip. The plurality of cooling patches directly contact the first semiconductor chip, and the plurality of cooling patches directly contact the heat dissipation device.

A thermal management device includes a body, a fluid movement structure, and a movement mechanism. The body is configured to receive heat from a heat-generating component at a proximal surface, and the fluid movement structure is on a distal surface of the body that is distal to the proximal surface, wherein the fluid movement structure is configured to direct fluid flow of a working fluid and the body is configured to transfer heat to the working fluid. The movement mechanism is configured to move the fluid movement structure relative to the body.

Provided is a semiconductor package including a first semiconductor device, an encapsulant surrounding the first semiconductor device, an upper redistribution structure provided on the encapsulant, and a heat dissipation block provided on the upper redistribution structure. The heat dissipation block includes a first block surface facing a top surface of the upper redistribution structure, the heat dissipation block includes a first protrusion on the first block surface, a first concave portion corresponding to the first protrusion is provided on the top surface of the upper redistribution structure, the first protrusion is located in the first concave portion, and a heat transfer layer is provided between the heat dissipation block and the top surface of the upper redistribution structure.

A transistor includes a substrate having a first surface and a second surface that are opposite to each other. An active layer is disposed on a side of the first surface, and a metal layer is disposed on a side of the second surface. A hole penetrates the substrate and at least a part of the active layer, where in a direction from the substrate to the active layer, the hole includes a first hole segment and a second hole segment, a joint between the first hole segment and the second hole segment has a connection interface, and a hole diameter of the first hole segment is greater than a hole diameter of the second hole segment. A conducting layer is formed on a wall surface of each of the first hole segment and the second hole segment, and the conducting layer is electrically connected to the metal layer.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a flex circuit coupled to the semiconductor die.

Chip packages, electronic devices and method for making the same are described herein. The chip packages and electronic devices have a heat spreader disposed over a plurality of integrated circuit (IC) devices. The heat spreader has an opening through which a protrusion from an overlaying cover extends into contact with one or more of the IC devices to provide a direct heat transfer path to the cover. Another one or more other IC devices have a heat transfer path to the cover through the heat spreader. The separate heat transfer paths allow more effective thermal management of the IC devices of the chip package.

A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transistors, overlaying the second level; a fourth level including fourth transistors, overlaying the third level, where the second level includes first memory cells, where each of the first memory cells includes at least one of the second transistors, where the fourth level includes second memory cells, where each of the second memory cells includes at least one of the fourth transistors, where the first level includes memory control circuits, where second memory cells include at least four memory arrays, each of the four memory arrays are independently controlled, and at least one of the second transistors includes a metal gate.

Many electronic devices generate significant amounts of heat during operation, especially those configured for high-performance computing often used to support machine learning/artificial intelligence (ML/AI) applications. However, operating electronic devices at increased temperatures can negatively impact their performance. While it is now common for integrated circuit packages to include a lid that can be coupled to a cooling plate providing heat dissipation, the lid is currently fabricated from copper metal which limits thermal conductivity and thus the ability to provide heat dissipation for the underlying integrated circuit. The present disclosure provide a diamond-based lid for an integrated circuit package, which can provide higher thermal conductivity than the existing copper lids.

A semiconductor device includes a substrate having a first surface, a second surface, and an opening; a semiconductor device layer having a third surface and a fourth surface; a heat transfer member; source electrodes disposed on a fourth surface; and electrically conductive vias that penetrate the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer. The heat transfer member includes the diamond layer and the metal layer, the diamond layer covers a bottom surface and an inner wall surface of the opening, and the metal layer is disposed on the diamond layer.