A semiconductor device includes one and the other wiring groups that are arranged at an interval in a first direction X, the one and the other wiring groups each including first lower wirings and second lower wirings arrayed as stripes extending in the first direction X, a first pad wiring that is arranged over the one and the other wiring groups and is electrically connected to at least one of the first lower wirings of each of the wiring groups, and a second pad wiring that is arranged over the one and the other wiring groups at an interval from the first pad wiring in a second direction Y intersecting the first direction X and is electrically connected to at least one of the second lower wirings of each of the wiring groups.

A semiconductor device includes a plurality of bonding pads which are constituted by an uppermost layer of a wiring layers, first and third bonding pads connected to an external power supply of the semiconductor chip, second and fourth bonding pads connected to the ground, a fifth bonding pad connected to the third bonding pad via the first inner wiring, and a sixth bonding pad connected to the fourth bonding pad via the second inner wiring, wherein there is no wiring constituting a circuit in one layer just below the uppermost layer at the first and second bonding pads, and there is a wiring constituting the circuit in the one layer just below the uppermost layer at the third to sixth bonding pads.

A semiconductor device includes: a multilayered wiring layer including an insulation layer (30) and a diffusion prevention layer (21, 22, 23, 24) stacked alternately and including a wiring layer (11, 12, 13) internally; a gap section (50) disposed at least in a portion of the insulation layer (30); and a support section (60) disposed at least in a portion of the gap section (50) and configured to support the multilayered wiring layer.

A display apparatus includes a first substrate including a display area and a non-display area at least partially surrounding the display area, and a groove that overlaps the non-display area and is recessed in a thickness direction, pixels located on the first substrate and overlapping the display area, a driving chip located in the groove, and a printed circuit board located in the non-display area and overlapping the driving chip in a plan view.

Systems and apparatus are provided for a hybrid wire size diameter under one single die. For example, an apparatus can include a memory cell die, a plurality of signal pads under the memory cell die and a plurality of power pads under the memory cell die. Each bonding wire coupled to a respective one of the plurality of signal pads has a first wire size diameter and each bonding wire coupled to a respective one of the plurality of power pads has a second wire size diameter larger than the first wire size diameter.

A semiconductor package includes a substrate including a first surface and a second surface, and a first substrate pad on the second surface, a first semiconductor chip on the second surface and including a third surface and a fourth surface, a first hotspot within the first semiconductor chip, and a first chip pad on the fourth surface, a first dummy pad on the fourth surface, a first layer connecting the first hotspot and the first dummy pad, a first pillar on the first dummy pad, a mold film on the substrate and including a fifth surface and a sixth surface, a thermal interface material layer on the mold film, and a heat slug on the thermal interface material layer; the mold film includes a first recess recessed inwardly from the sixth surface of the mold film, and at least part of the thermal interface material layer is in the recess.

Stacked semiconductor packages with features to mitigate trace exposer and associated systems and methods are disclosed herein. In some embodiments, the stacked semiconductor package includes a base substrate, a stack of dies carried by the base substrate, and a mold material deposited at least partially encapsulating the stack of dies. The base substrate can include an active surface and a back surface opposite the active surface. Further, the active surface can include one or more cuts into a peripheral portion of the active surface (e.g., stepped structures at the peripheral edges of the base substrate). The base substrate can also include a plurality of bond pads carried by the active surface over the peripheral portion. Still further, the mold material can fill each of the one or more cuts in the active surface, thereby insulating the bond pads from exposure at a sidewall of the stacked semiconductor package.

A semiconductor package includes a package substrate having substrate pads disposed in a first direction on one surface, a semiconductor chip having chip pads disposed in the first direction, and bonding wires connecting the chip pads and the substrate pads. The bonding wires include first and second bonding wires alternately connected to the substrate pads respectively, in the first direction, the first bonding wires are connected to the substrate pads at a first angle less than a right angle with respect to a direction of the semiconductor chip, the second bonding wires are connected to the substrate pads at a second angle less than the first angle with respect to the direction of the semiconductor chip and a position at which the first bonding wires contact the substrate pads is closer to the semiconductor chip than a position at which the second bonding wires contact the substrate pads is to the semiconductor chip.

An IC structure includes a memory stack including a plurality of semiconductor die. The semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface, four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within an upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die. One the semiconductor die includes at least one thermal edge portion exposed from the second sidewall.

A semiconductor package comprises a first die having a central region and a peripheral region that surrounds the central region; a plurality of through electrodes that penetrate the first die; a plurality of first pads at a top surface of the first die and coupled to the through electrodes; a second die on the first die; a plurality of second pads at a bottom surface of the second die, the bottom surface of the second die facing the top surface of the first die; a plurality of connection terminals that connect the first pads to the second pads; and a dielectric layer that fills a space between the first die and the second die and surrounds the connection terminals. A first width of each of the first pads in the central region may be greater than a second width of each of the first pads in the peripheral region.