Provided is an evaluation method of a semiconductor substrate, including: implanting hydrogen ions from an implantation surface of a semiconductor substrate containing silicon; annealing the semiconductor substrate; measuring a differential carrier concentration, which is a difference between a first carrier concentration in a passage region of the semiconductor substrate through which the hydrogen ions have passed and a second carrier concentration in a non-passage region of the semiconductor substrate where the hydrogen ions have not reached; and evaluating a carbon concentration in the semiconductor substrate, based on the differential carrier concentration.

Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

Methods and systems for measuring values of one or more parameters of interest, including changes in values of one or more parameters of interest, based on measured spectral differences are presented herein. A trained spectral difference based measurement model determines changes in the values of one or more parameters of interest based on a measure of differences in spectra measured before and after one or more process steps. In some examples, a measure of spectral difference is determined based on a difference in measured intensity, a difference in harmonic signal values, or a difference in value of one or more Mueller Matrix elements. A measure of spectral difference may be expressed as a set of difference values, a scalar value, or coefficients of a functional fit to difference values. A measure of spectral difference may be determined based on a weighting of spectral differences according to wavelength.

There is provided a system and method of defect detection on a semiconductor specimen based on template matching or machine learning (ML). Template matching is performed between a set of template patches and a set of runtime images, by selectively performing at least two of the following: matching a defect template patch in an inspection image, matching a reference template patch in a reference image, or matching a difference template patch in a difference image, so as to provide likelihood of target of interest (TOI) presence in the inspection image. The ML-based approach includes feeding an inspection patch and a reference patch together to a trained ML model, to generate a feature vector representative of a given TOI candidate, and evaluating the feature vector of the given TOI candidate to provide a likelihood of the given TOI candidate being a TOI or non-TOI.

Embodiments of the present disclosure relate to temperature and film adjustments for process chambers, and related systems and methods. In one or more embodiments, a substrate processing system includes a chamber body at least partially defining a processing volume, and a substrate support disposed in the processing volume and configured to support a substrate. The substrate processing system includes one or more gas inlets operable to provide a processing gas that flows horizontally across the processing volume and over the substrate support, and one or more heat sources operable to heat the substrate. The substrate processing system includes a laser source operable to direct energy to the substrate to provide supplemental heating, a thickness sensor operable to measure a film thickness on the substrate, and a controller operable to control the laser source based on the measured film thickness.

Method and systems for bonding and/or debonding substrates are disclosed. A method comprises positioning a first surface of a first substrate directly opposite to and at a distance from a surface of a second substrate. The method further comprises applying a first pressure over a first portion of a second surface of the first substrate via pressurized gas to contact a first portion of the first surface of the first substrate to a first portion of the first surface of the second substrate, and applying a second pressure via pressurized gas in a direction opposite a propagation direction of a bonding wave front between the first substrate and the second substrate to control the bonding wave front.

A semiconductor device inspection method includes: selecting, for a semiconductor device including at least one layer, a target layer on which inspection and measurement are to be performed; selecting a material to fill a hole region formed inside the semiconductor device; conducting a simulation for an optical inspection and a measurement for the semiconductor device; selecting, based on the simulation, a wavelength band of light for the optical inspection and the measurement; and detecting, through the light at the selected wavelength, a lower portion of the semiconductor device and a defect of the semiconductor device. A refractive index of the material filling the inside of the hole region is greater than a refractive index of a molding layer surrounding the outside of the hole region.

Described herein are manufacturing techniques and packages that enable wafer-scale heterogenous integration of electronic integrated circuits (EIC) with photonic integrated circuits (PIC) using a reconstitution-based fabrication approach. Wafer-scale photonic devices are formed by assembling strips of known-good dies (KGD). Such strips include arrays of adjacent reticles that have been singulated from a wafer. A strip can include a single row (or column) of reticles singulated from a wafer or multiple rows (or columns) that are adjacent to one another, enabling two-dimensional assembly and increased coverage. Wafer reconstitution involves transferring and bonding one or more strips of KGDs to a target substrate. A KGD is a reticle that is not part of an exclusion zone and has been verified to work properly. Thus, a reconstituted wafer includes strips that have verified to be fully functional.

An electronic device and a manufacturing method thereof are provided. The electronic device includes a substrate, at least one electronic unit, an adhesive layer, an insulating layer, and a conductive structure. The substrate has at least one recess. The electronic unit is disposed in the recess, and the adhesive layer is disposed between the electronic unit and a bottom surface of the recess. The insulating layer is disposed on the electronic unit and the recess. The conductive structure is disposed on the insulating layer, and the conductive structure penetrates through the insulating layer to be electrically connected to the electronic unit.

Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.