There is provided a film forming method of forming a film in a recess formed on a surface of a substrate. The film forming method includes: forming an adsorption-inhibiting region by supplying an adsorption-inhibiting gas to the substrate; adsorbing a silicon-containing gas to a region other than the adsorption-inhibiting region by supplying the silicon-containing gas to the substrate; and forming a silicon nitride film by exposing the substrate to a nitrogen-containing gas so that the nitrogen-containing gas reacts with the adsorbed silicon-containing gas, wherein the adsorbing the silicon-containing gas includes controlling a dose amount of the silicon-containing gas to be supplied to be equal to or greater than an adsorption saturation amount of the silicon-containing gas to be adsorbed on the substrate on which no adsorption-inhibiting region is formed.

A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma power, and modulating chamber pressure.

A film forming method includes forming a silicon nitride film in a recess in a substrate surface. Forming of the silicon nitride film includes: supplying an adsorption-inhibiting gas for inhibiting adsorption of a silicon-containing gas to the substrate surface in a form of a plasma; supplying the silicon-containing gas to the substrate surface; and supplying a nitriding gas for nitriding an adsorbate of the silicon-containing gas to the substrate surface in a form of a plasma. Nitriding gas contains N.sub.2 gas. Forming of the silicon nitride film includes supplying an adsorption-promoting gas for promoting adsorption of the silicon-containing gas to the substrate surface. Performing a process: including supplying of the adsorption-inhibiting gas; supplying of the silicon-containing gas; and supplying of the nitriding gas one or more times, and performing supplying of the adsorption-promoting gas one or more times are performed a plurality of times repeatedly.

A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a base substrate having, on a main face, a charge-trapping layer and forming a dielectric layer having a thickness greater than 200 nm on the charge-trapping layer. Once the dielectric layer is formed, the ionized deposition and sputtering of the dielectric layer are simultaneously performed. The transfer method also comprises assembling, by way of molecular adhesion and with an unpolished free face of the dielectric layer, a donor substrate to the dielectric layer of the carrier substrate, the donor substrate having an embrittlement plane defining the thin layer. Finally, the method comprises splitting the donor substrate at the embrittlement plane to release the thin layer and to transfer it onto the carrier substrate.

Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.

Disclosed herein is a method for controlling particle growth in a processing chamber. The method includes performing at least one plasma deposition process using a precursor to form a layer on a substrate in a chamber. The method also includes providing a power to the chamber during the at least one plasma deposition process and monitoring at least one criteria to determine when at least one plasma purge is to be performed. The method further includes responsive to the at least one criteria indicating that the at least one plasma purge is to be performed, performing the at least one plasma purging by applying a gas into the chamber.

The present disclosure discloses a method for manufacturing a via, including: forming a first dielectric layer on the surface of an underlying structure; performing patterned etching on the first dielectric layer to form a via opening; forming a first metal layer; performing first-time metal CMP to remove the first metal layer on the outer surface of the via opening, where a top surface of the first metal layer in the via opening is located below a top surface of the first dielectric layer; performing second-time dielectric etch back, to selectively etch the first dielectric layer, lower the top surface of the first dielectric layer as being below the top surface of the first metal layer, and form a metal protrusion of a via; and forming a pattern of an upper metal interconnection layer.