A method for processing a substrate is provided. The method includes disposing a substrate in a processing region of a process chamber and flowing a reaction gas into a remote plasma region of the process chamber, flowing a precursor gas into the processing region through the second plurality of channels in the showerhead, generating an inductively coupled plasma in the remote plasma region using the reaction gas to form plasma radicals, and exposing the precursor gas in the processing region to plasma radicals to form a dielectric film on the substrate with at least 95% step coverage.

The present disclosure generally provides methods. The methods include exposing a substrate in a processing chamber to a deposition precursor to form a first film. The first film having a first dielectric constant, a first leakage current, a first breakdown voltage, and a first hardness. The first film is exposed to a reactive precursor to form a second film. The second film having a second dielectric constant, a second leakage current, a second breakdown voltage, and a second hardness, wherein the reactive precursor comprises an oxygenated precursor. The second film is exposed to a UV light source to form a third film. The third film having a third dielectric constant, a third leakage current, a third breakdown voltage, and a third hardness.

Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.

A film forming method of forming an oxide film, which contains at least a predetermined element and oxygen, on a substrate, includes: (a) supplying a first raw material gas, which contains the predetermined element, to the substrate; (b) supplying a second raw material gas, which contains the predetermined element, contains a bond between the predetermined element and oxygen and a bond between the predetermined element and a hydroxyl group, and is different from the first raw material gas, to the substrate; and (c) repeating one cycle a plurality of times, the one cycle including (a) and (b).

A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

The present invention provides an electronic or electrical device or component thereof comprising a cross-linked polymeric coating on a surface of the electronic or electrical device or component thereof; wherein the cross-linked polymeric coating is obtainable by exposing the electronic or electrical device or component thereof to a plasma comprising a monomer compound and a crosslinking reagent for a period of time sufficient to allow formation of the cross-linked polymeric coating on a surface thereof, wherein the monomer compound has the following formula: ##STR00001##
where R.sub.1, R.sub.2 and R.sub.4 are each independently selected from hydrogen, optionally substituted branched or straight chain C.sub.1-C.sub.6 alkyl or halo alkyl or aryl optionally substituted by halo, and R.sub.3 is selected from: ##STR00002##
where each X is independently selected from hydrogen, a halogen, optionally substituted branched or straight chain C.sub.1-C.sub.6 alkyl, halo alkyl or aryl optionally substituted by halo; and n.sub.1 is an integer from 1 to 27; and wherein the crosslinking reagent comprises two or more unsaturated bonds attached by means of one or more linker moieties and has a boiling point at standard pressure of less than 500 C.

A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.

Methods of depositing a liner layer in a semiconductor device are described. In some embodiments, the method includes depositing a carbon layer including carbon on a substrate, the substrate having at least one feature including a sidewall surface and the carbon layer having a carbon surface; and selectively depositing the liner layer on the sidewall surface over the carbon surface. In other embodiments, the method includes depositing a carbon layer comprising carbon in a bottom second portion of a substrate feature selectively over a top first portion of the substrate feature, the top first portion having a sidewall surface, the carbon layer having a carbon surface; etching the carbon surface; and depositing the conformal layer on the sidewall surface of the top first portion, the conformal layer deposited on the sidewall surface selectively over the carbon surface.

A method for thermal management of semiconductor devices provides a semiconductor material. A beryllium oxide (BeO) layer is epitaxially grown over the semiconductor material. A polycrystalline diamond coating is deposited over the BeO layer.

A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, and with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.0 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.