An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated from a second process gas comprising tungsten; and (d) etching the recess with a third plasma generated from a third process gas.

Disclosed herein are methods for direct bonding. In some embodiments, the direct bonding method includes microwave annealing a dielectric bonding layer of a first element by exposing the dielectric bonding layer to microwave radiation and then directly bonding the dielectric bonding layer of the first element to a second element without an intervening adhesive. The bonding method also includes depositing the dielectric bonding layer on a semiconductor portion of the first element at a first temperature and microwave annealing the dielectric bonding layer at a second temperature lower than the first temperature.

A method of forming a partially silicided element is provided. A silicided structure including a silicide layer on a base structure is formed. A dielectric region is formed over the silicided structure. The dielectric region is etched to form a contact opening exposing a first area of the silicide layer and a tub opening exposing a second area of the silicide layer. A conformal metal is deposited to (a) fill the contact opening to define a contact and (b) form a cup-shaped metal structure in the tub opening. Another etch is performed to remove the cup-shaped metal structure in the tub opening, to remove the underlying silicide layer second area and to expose an underlying area of the base structure, wherein the silicide layer first area remains intact. The base structure with the intact silicide layer first area and removed silicide layer second area defines the partially silicided element.

Techniques are provided for containing magnetic fields generated by an integrated switching package and for reducing electromagnetic interference generated from an integrated switching package.

Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

The current disclosure relates to a method of depositing a metal halide-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a metal precursor into the reaction chamber in a vapor phase and providing a halogen precursor into the reaction chamber in a vapor phase to form the metal halide-comprising material on the substrate. In the method, the metal precursor comprises a metal atom having an oxidation state of +1 bonded to an organic ligand. Also, a deposition assembly for depositing a metal halide-comprising material is disclosed.

An electronic device includes a substrate and a semiconductor die having conductive terminals along a first side, and a conductive shield with electrically and/or thermally conductive material that extends through the semiconductor die from the first side to an opposite second side, the conductive terminals coupled to respective conductive features of the substrate. A method includes forming via openings extending from a first side of a wafer to an opposite second side, forming a conductive shield that extends in the via openings and covers a portion of the second side of the wafer, and forming conductive terminals along the first side of the wafer.

A method for forming an interconnect structure includes filling a hole through a dielectric layer with ruthenium using a deposition-etch-deposition (DED) process, forming a ruthenium layer over the dielectric layer, and forming a conductive feature from the ruthenium layer with a subtractive process. One or more etch steps of the DED process remove isolated ruthenium nuclei deposited over the dielectric layer by deposition steps of the DED process.

There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.