A method of manufacturing a semiconductor device is provided, the method including: forming an insulating film on a semiconductor substrate; selectively removing the insulating film; forming a metal film on the semiconductor substrate by leaving a damage layer of a surface of the semiconductor substrate, the damage layer being generated when the insulating film is selectively removed; forming an electrode by selectively removing the metal film; and forming polyimide on the electrode. The damage layer of the surface of the semiconductor substrate, which is generated when the insulating film is selectively removed, may be selectively removed.

A selective deposition method is disclosed. The selective deposition method comprises providing a plurality of substrates in a process chamber, the plurality of substrates having a first surface comprising a first material and a second surface comprising a second material, the first surface being different than the second surface, and selectively forming a layer comprising a metal on the first surface relative to the second surface, wherein selectively forming the layer comprises: i) contacting the plurality of substrates with a precursor comprising a compound of the form MXnOm, wherein: M is a metal; X is selected from the group consisting of F, Cl, Br, and I; n and m are integers; n+2m is at least 4 to at most 6; and ii) contacting the plurality of substrates with a reactant, wherein step i) comprises pulsing the precursor for a pulse duration of greater than 10 seconds.

Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

A method for manufacturing a semiconductor device has a groove portion forming step, a first attachment step, a grinding step, a first ashing step, and a metal film forming step. The groove portion forming step is a step of forming a plurality of groove portions in a base material from a device surface side in which an element region is formed. The grinding step is a step of grinding the base material from a side opposite to the device surface to form a back surface. The grinding step is a step of singulating the base material by making a thickness of the base material equal to or less than depths of the groove portions. The metal film forming step is a step of forming a metal film on the back surface.

Methods of depositing metal nitride layers employing low temperature cyclical deposition processes including cyclic compounds are disclosed. The cyclical deposition processes include repeatedly performing a deposition cycle including introducing a metal precursor into a reaction chamber, introducing a nitrogen reactant into the reaction chamber, and introducing a reducing agent comprising a cyclic compound into the reaction chamber. Metal nitride layers and semiconductor structures including metal nitride layers are also disclosed.

Proposed are a precursor for forming a lanthanide metal-containing thin film, the precursor including a compound represented by Chemical Formula 1, a method for forming a lanthanide metal-containing thin film using the same, and a semiconductor device including the lanthanide metal-containing thin film. The precursor for forming the thin film contains an amidinate ligand and thus exhibits chemical properties, such as high heat resistance and high volatility, thereby enabling the formation of a high-quality thin film.

A sputtering gas containing a rare gas is introduced into a vacuum chamber 1 of a vacuum atmosphere, an electric power with a negative potential is supplied to a target 2, a positive potential is applied to the reflector plate 4, a plasma is generated, and subsequently the supply of the sputtering gas is stopped, then the target is sputtered while a self-holding discharge under low pressure of plasma is generated. A high-frequency bias power is supplied from a high-frequency power source 61 through an impedance matching device 62 to a stage 5 on which an object to be deposited is mounted. An electron matcher having at least one variable reactor to be electronically controlled is used as an impedance matching device, and a high-frequency bias power is intermittently supplied to the stage at a predetermined frequency.

The disclosed technology generally relates to forming thin films, and more particularly to high quality, conformal thin films using relatively low amounts of precursor gas, and methods of forming the same. In one aspect, a method of forming a thin film comprises exposing the substrate to one or more vapor deposition cycles in a reaction chamber, wherein exposing the substrate to each vapor deposition cycle comprises exposing the substrate to a first precursor and a second precursor, wherein exposing the substrate to the first precursor and the second precursor is carried out without evacuating to remove a substantial amount of either of the first precursor or the second precursor during and between exposing the substrate to the first precursor and exposing the substrate the second precursor.

A substrate processing method for forming a thin film includes providing or forming a transition metal nitride film on a substrate in a reaction chamber and exposing the transition metal nitride film to a hydrogen treatment to form a treated transition metal compound film. The hydrogen treatment may lower the resistivity of the transition metal nitride film and/or be used to desirably tune other properties and/or composition of the transition metal nitride film.

An embodiment relates to an area selective atomic layer thin film deposition method, including: performing surface treatment using fluorocarbon (CFx) plasma on a non-deposition area of the surface of a substrate; providing a thin film precursor and a reactant to the substrate to selectively form an atomic layer thin film on a deposition area of the substrate surface; and removing any residue remaining on the non-deposition area.