A display includes a wiring pad and a dummy pad on a first substrate. A first planarization layer is disposed on the wiring pad and the dummy pad. A first pad electrode layer is connected to the wiring pad and a second pad electrode layer is connected to the dummy pad. The first and second pad electrode layers are disposed on the first planarization layer. A first insulating layer covers the first and second pad electrode layers. A first pad electrode upper layer is disposed on the first pad electrode layer. A second pad electrode upper layer is disposed on the second pad electrode layer. The wiring pad, the first pad electrode layer, and the first pad electrode upper layer are electrically connected. The dummy pad, the second pad electrode layer, and the second pad electrode upper layer are electrically connected.

A stacked transistor arrangement and process of manufacture thereof are provided. Switched electrodes of first and second transistor chips are accessible on opposite sides of the first and second transistor chips. The first and second transistor chips are stacked one on top of the other. Switched electrodes of adjacent sides of the transistor chips are coupled together by a conductive layer positioned between the first and second transistor chips. Switched electrodes on sides of the first transistor chip and the second transistor chip that are opposite the adjacent sides are coupled to a lead frame by bond wires or solder bumps.

Embodiments of present invention provide a semiconductor structure. The structure includes a device die including a device layer; a back-end-of-line (BEOL) structure on a frontside of the device layer and a frontside substrate attached to the BEOL structure; and a backside power distribution network (BSPDN) structure on a backside of the device layer and a backside substrate attached to the BSPDN structure; and a device package including a base element and a lid element, wherein the device die is attached to the base element of the device package through multiple C4 bumps at the frontside substrate and is attached to the lid element of the device package at the backside substrate. A method of forming the same is also provided.

Hybrid fanouts for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, at least one edge a first semiconductor die is attached to a molding including through mold vias (TMVs). Conductive traces may be formed on a first side of the first semiconductor die, where the first side includes integrated circuitry coupled to the conductive traces. Moreover, conductive pads may be formed on a surface of the molding, which is coplanar with the first side. The conductive pads are coupled to first ends of the TMVs, where second ends of the TMVs are coupled to bond wires connected to one or more second semiconductor dies that the first semiconductor die carries. Conductive bumps can be formed on the conductive traces and pads such that the first semiconductor die and the molding attached thereto can be directly attached to a printed circuit board.

A method of making a semiconductor device may include providing a large semiconductor die comprising conductive interconnects with a first encapsulant disposed over four side surfaces of the large semiconductor die, over the active surface of the large semiconductor die, and around the conductive interconnects. A first build-up interconnect structure may be formed over the large semiconductor die and over the first encapsulant. Vertical conductive interconnects may be formed over the first build-up interconnect structure and around an embedded device mount site. An embedded device comprising through silicon vias (TSVs) may be disposed over the embedded device mount site. A second encapsulant may be disposed over the build-up structure, and around at least five sides of the embedded device. A second build-up structure may be formed disposed over the planar surface and configured to be electrically coupled to the TSVs of the embedded device and the vertical conductive interconnects.

The present disclosure relates to an electronic device comprising a wafer comprising a first upper surface having at least one first contact arranged thereon; and at least one die comprising a second upper surface having at least one second contact arranged thereon, and at least one first lateral surface orthogonal to the second upper surface, said first contact being coupled to said second contact by a connector comprising one first conductive pillar formed on said first contact of said wafer; one second conductive pillar formed on said second contact of said die; and at least one conductive ball positioned in contact with at least a first upper portion of said first pillar(s) and in contact with at least one second upper portion of said second pillar(s).

A high frequency module capable of improving heat dissipation characteristics of a power amplifier and suppressing influence of heat of the power amplifier on another electronic component is provided. A high frequency module includes a mounting substrate, a power amplifier, a switch, a plurality of external connection terminals, and a connector. The mounting substrate has a first main surface and a second main surface that are opposite to each other. The power amplifier and the switch are disposed on the second main surface of the mounting substrate. The plurality of external connection terminals are disposed on the second main surface of the mounting substrate. The connector is able to be connected to an external substrate. The plurality of external connection terminals include a first external connection terminal that is connected to the connector. The first external connection terminal is disposed between the power amplifier and the switch.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a first substrate having first pads on a first surface of the first substrate, a second substrate on the first substrate and having a plurality of second pads on a second surface of the second substrate, and connection terminals between the first substrate and the second substrate and correspondingly coupling the first pad to the second pads. Each of the connection terminals has a first major axis and a first minor axis that are parallel to the first surface of the first substrate and are orthogonal to each other. When viewed in a plan view, the first minor axis of each of the connection terminals is directed toward a center of the first substrate.

A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally from a side surface of the RDL. A second dielectric layer is disposed over the RDL, where the second dielectric layer also has a curved top surface.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.