Provided are a polymer including a first repeating unit represented by Formula 1 below, a resist composition including the same, and a pattern formation method using the resist composition.

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In Formula 1, L.sub.11, L.sub.12, a11, a12, X.sub.11, and X.sub.12 are provided herein.

Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.

A hardmask structure and a method of forming a semiconductor structure are provided. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The first dielectric antireflective coating is disposed on the first ashable hardmask. The second ashable hardmask is disposed on the first dielectric antireflective coating. A stress of the first ashable hardmask is from about 100 MPa to about 100 MPa.

The present disclosure provides a method for improving residue formation after mandrel removal, including steps of: providing a TEOS layer, forming mandrel structures spaced apart from each other on the TEOS layer, and forming spacers on sidewalls of each of the mandrel structures; forming a first SOC layer to cover the surface of the TEOS layer, the mandrel structures, and the spacers of the mandrel structures, and forming a SOC structure that covers the spacers and exposes the top surfaces of the mandrel structures; removing the mandrel structures by etch along sidewalls of SOC structure, forming a first groove between two of the spacers on the sidewalls of the removed mandrel structures; forming a second SOC layer to cover the SOC structure and fill the first groove; performing top planarization of the second SOC layer until the top surface of the SOC structure is exposed.

In a pattern formation method for a semiconductor device fabrication, an original pattern for manufacturing a photomask is acquired, a modified original pattern is obtained by performing an optical proximity correction on the original pattern, a sub-resolution assist feature (SRAF) seed map with respect to the modified original pattern indicating locations where an image quality is improved by an SRAF pattern is obtained, SRAF patterns are placed around the original pattern, the SRAF patterns and the modified original pattern are output as mask data, and the photo mask is manufactured using the mask data.

The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a first set of photoresist structures, a second photoresist structure, and a third photoresist structure. The first set of photoresist structures is disposed along a first orientation. The second photoresist structure is disposed non-parallel to the first orientation. The third photoresist structure is disposed non-parallel to the first orientation. The second photoresist structure and the third photoresist structure contact at least one of the first set of photoresist structures.

Novel functional poly(organosiloxane) resin compositions, methods of producing novel poly(organosiloxane) coating compositions, and coated substrates having improved properties suitable for, e.g., optical applications for achieving predetermined properties of refractive index, absorption coefficient and other properties. Specific embodiments comprise silicon precursors having a substituent that contains a fused aromatic structure exhibiting a butterfly shape, wherein the half-planes defined by aromatic rings joined by intermediate N and S atoms exhibit a dihedral angle of <165 #, whereas the CSC angle of the folded thiazine, in particular 1,4-thiazine, ring is less than 110 #. In on embodiment, the silicon precursor has a substituent that comprises an optionally substituted thiazine ring.

Novel functional poly(organosiloxane) resin compositions, methods of producing novel poly(organosiloxane) coating compositions, and coated substrates having improved properties suitable for, e.g., optical applications for achieving predetermined properties of refractive index, absorption coefficient and other properties. Specific embodiments comprise silicon precursors having a substituent that contains a fused aromatic structure exhibiting a butterfly shape, wherein the half-planes defined by aromatic rings joined by intermediate N and S atoms exhibit a dihedral angle of <165 #, whereas the CSC angle of the folded thiazine, in particular 1,4-thiazine, ring is less than 110 #. In on embodiment, the silicon precursor has a substituent that comprises an optionally substituted thiazine ring.

The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where W.sub.1 represents a tetravalent or hexavalent organic group, n1 represents an integer of 1 or 2, n2 represents 2 or 3, each R.sub.1 independently represents any in the following formula (1B), and a hydrogen atom of a benzene ring in the formula (1A) is optionally substituted with a fluorine atom. This provides: a compound having a dioxin structure, which is cured even under film formation conditions in inert gas, and which is capable of forming an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formability and adhesiveness to a substrate; and an organic film material containing the compound. ##STR00001##

A method of etching an underlying layer includes performing a pretreatment step, a reaction step, and an etch step. The pretreatment step includes exposing surfaces of a patterned carbon-containing layer to oxygen to form CO bonds at the surfaces with or without using plasma. The reaction step includes exposing the CO bonds to an oxygen-reactive precursor to selectively form a mask protection layer on the surfaces of the patterned carbon-containing layer. The etch step is performed after the pretreatment step, and includes flowing an etchant gas and exciting plasma from the etchant gas to etch the underlying layer using the patterned carbon-containing layer as an etch mask. Any of the pretreatment step, the reaction step, and the etch step may be performed consecutively, concurrently, or repeated as a cycle.