Method for improving residue formation after mandrel removal

Abstract

The present disclosure provides a method for improving residue formation after mandrel removal, including steps of: providing a TEOS layer, forming mandrel structures spaced apart from each other on the TEOS layer, and forming spacers on sidewalls of each of the mandrel structures; forming a first SOC layer to cover the surface of the TEOS layer, the mandrel structures, and the spacers of the mandrel structures, and forming a SOC structure that covers the spacers and exposes the top surfaces of the mandrel structures; removing the mandrel structures by etch along sidewalls of SOC structure, forming a first groove between two of the spacers on the sidewalls of the removed mandrel structures; forming a second SOC layer to cover the SOC structure and fill the first groove; performing top planarization of the second SOC layer until the top surface of the SOC structure is exposed.

Claims

1. A method for improving residue formation after mandrel removal, at least comprising: step 1, providing a tetraethyl orthosilicate (TEOS) layer, forming mandrel structures on the TEOS layer and spaced apart from each other, and forming spacers on sidewalls of each of the mandrel structures; step 2, forming a first spin-on-carbon (SOC) layer to cover the TEOS layer, the mandrel structures, and the spacers of the mandrel structures, and forming an SOC structure by means of photolithography and etch, wherein the SOC structure covers the spacers and exposes top surfaces of the mandrel structures; step 3, removing the mandrel structures by etch along sidewalls of the SOC structure, wherein a first groove is formed between two of the spacers formed on the sidewalls of the removed mandrel structures, and wherein after the mandrel structures are removed, residue polymers are attached to a surface of the SOC structure; step 4, forming a second SOC layer to cover the SOC structure and fill the first groove; step 5, performing top planarization of the second SOC layer until a top surface of the SOC structure is exposed; step 6, performing a dry etch-back process on the SOC structure and the second SOC layer, wherein the dry etch-back process is stopped at the top of the spacers, wherein the dry etch-back process removes a portion of the SOC structure that contains the residue polymers attached to the surface of the SOC structure; and step 7, removing a remaining SOC structure, forming a second groove in an exposed region between two of the spacers once covered by the SOC structure, and removing a remaining second SOC layer to expose the first groove.

2. The method for improving residue formation after mandrel removal according to claim 1, wherein the forming the spacers in step 1 further comprises: (1) depositing a hard mask layer on the TEOS layer to cover the mandrel structures; and (2) removing the hard mask layer from the TEOS layer and removing the hard mask layer from the top surfaces of the mandrel structures, wherein a portion of the hard mask layer on the sidewalls of the mandrel structures is retained for forming the spacers.

3. The method for improving residue formation after mandrel removal according to claim 1, wherein the mandrel structures in step 1 comprise amorphous silicon.

4. The method for improving residue formation after mandrel removal according to claim 2, wherein the hard mask layer comprises TiO.

5. The method for improving residue formation after mandrel removal according to claim 1, wherein the forming the SOC structure in step 2 comprises: (a) forming a bottom anti-reflection coating layer on the first SOC layer and a photoresist layer on the bottom anti-reflection coating layer; (b) performing photolithographic exposure and development to form a photoresist pattern used for etching the mandrel structures; and (c) etching the first SOC layer according to the photoresist pattern to form the SOC structure that covers the spacers and exposes the top surfaces of the mandrel structures.

6. The method for improving residue formation after mandrel removal according to claim 1, wherein the residue polymers attached to the surface of the SOC structure in step 3 comprise carbon-silicon polymers produced during removing the mandrel structures by etch.

7. The method for improving residue formation after mandrel removal according to claim 1, wherein the remaining SOC structure and the remaining second SOC layer are removed in step 7 by a one step in-situ ashing technique.

8. The method for improving residue formation after mandrel removal according to claim 1, wherein a lateral thickness of one of the spacers in step 3 is about 120 .

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 to FIG. 6 are schematic diagrams of structures formed in steps of a method for improving residue formation after mandrel removal in the present disclosure; and

(2) FIG. 7 is a flowchart of the method for improving residue formation after mandrel removal in the present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

(3) The embodiments of this application will be described below through specific examples. Those skilled in the art can easily understand the other advantages and effects of this application from the content disclosed in this description. This application may also be implemented or applied through other different specific implementation modes, and the details in this description may be modified or changed based on different perspectives and applications without deviating from the spirit of this application.

(4) Referring to FIG. 1 to FIG. 7. It should be noted that the drawings provided in the embodiments are only used to illustrate the basic concept of the present disclosure in a schematic way, so the drawings only show the components related to the present disclosure rather than being drawn according to the number, shape, and size of the components in actual implementations. The type, number, and proportion of various components can be changed in the actual implementations, and the layout of the components may be more complicated.

(5) The present disclosure provides a method for improving residue formation after mandrel removal, referring to FIG. 7, at least including the following steps.

(6) Step 1. Provide a tetraethyl orthosilicate (TEOS) layer, where mandrel structures spaced apart from each other are formed on the TEOS layer, and spacers are formed to sidewalls of each of the mandrel structures. Referring to FIG. 1, in step 1, the mandrel structures 02 spaced apart from each other are formed on the TEOS layer 01, and the spacers 03 are formed to sidewalls of each of the mandrel structures 02.

(7) Furthermore, in this embodiment of the present disclosure, a method of forming the spacers 03 in step 1 include: (1) depositing a hard mask layer on the TEOS layer 01 to cover the mandrel structure; and (2) removing the hard mask layer from the TEOS layer and the hard mask layer from the top surface of the mandrel structure, while the hard mask layer is retained on the sidewalls of the mandrel structure and spacers are thus formed.

(8) Furthermore, in this embodiment of the present disclosure, the mandrel structure 02 in step 1 comprises amorphous silicon.

(9) Furthermore, in this embodiment of the present disclosure, the hard mask layer in step (2) comprises TiO.

(10) Step 2. Form a first SOC layer to cover the surface of the TEOS layer, the mandrel structure, and the spacers of the mandrel structure, and form, by means of photolithography and etch, a SOC structure that covers the spacers and exposes the top of the mandrel structure. Referring to FIG. 1, in step 2, the first SOC layer 04 is formed to cover the surface of the TEOS layer 01, the mandrel structure 02, and the spacers 03 of the mandrel structure. Referring to FIG. 2, the SOC structure 07 that covers the spacers 03 and exposes the top of the mandrel structure 02 is formed by means of the photolithography and etch. The SOC layer in of the present disclosure is a spin-on-carbon (SOC) layer.

(11) Furthermore, in this embodiment of the present disclosure, a method of forming the SOC structure 07 in step 2 includes: (a) forming a bottom anti-reflection coating layer on the first SOC layer 04 and a photoresist on the bottom anti-reflection coating; (b) performing exposure and development to form a photoresist pattern 06 used for etching the mandrel structure (the developed bottom anti-reflection coating layer 05 is located below the photoresist pattern 06); and (c) etching the first SOC layer 04 according to the photoresist pattern 06 to form the SOC structure 07 that covers the spacers 03 and exposes the top surface of the mandrel structure 02. Referring to FIG. 2, after the SOC structure 07 is formed, there is the bottom anti-reflection coating layer 05 remained on the top of the SOC structure 07.

(12) Step 3. Remove the mandrel structure by etch on the sidewalls of the SOC structure, where a first groove is formed between the spacers formed on the sidewalls of the removed mandrel structure, and after the mandrel structure is removed, there are polymers attached to the surface of the SOC structure. Referring to FIG. 3, in step 3, the mandrel structure is removed by etch along the sidewalls of the SOC structure 07, where the first groove 08 is formed between the spacers 03 formed on the sidewalls of the removed mandrel structure, and after the mandrel structure is removed, there is the polymers attached to the surface of the SOC structure 07.

(13) Furthermore, in this embodiment of the present disclosure, the polymers attached to the surface of the SOC structure in step 3 are carbon-silicon polymers produced during a process of removing the mandrel structure by etch.

(14) Furthermore, in this embodiment of the present disclosure, a lateral thickness of the spacers 03 in step 3 is 120 . The lateral thickness of the spacers 03 in FIG. 1 to FIG. 3 is the spacer's width in a left-right direction.

(15) Step 4. Form a second SOC layer to cover the SOC structure and fill the first groove. Referring to FIG. 4, the second SOC layer 09 is formed to cover the SOC structure and fill the first groove.

(16) Step 5. Perform top planarization of the second SOC layer until the top surface of the SOC structure is exposed. Referring to FIG. 4, in step 5, the top planarization of the second SOC layer 09 is performed until the top surface of the SOC structure 07 is exposed.

(17) Step 6. Perform a dry etch-back process on the SOC structure and the second SOC layer, where the etch-back process removes a portion of the SOC structure that contains the polymers attached to the surface thereof and is stopped at the top surfaces of the spacers. Referring to FIG. 5, in step 6, the dry etch-back process is performed on the SOC structure 07 and the second SOC layer 09, where the dry etch-back process is stopped at the top surfaces of the spacers 03 and it removes a portion of the SOC structure that contains the polymers attached to the surface thereof. As such, after performing the dry etch-back process on the SOC structure in step 6, the polymers attached to the surface of the SOC structure are also removed.

(18) Step 7. Remove the remaining SOC structure and the remaining second SOC layer, where after the remaining SOC structure is removed, a region between two of the spacers once covered by the SOC structure is exposed and forms a second groove, and the first groove is exposed after the remaining second SOC layer is removed. Referring to FIG. 6, in step 7, the remaining SOC structure 07 and the remaining second SOC layer 09 as shown in FIG. 5 are removed, where after the remaining SOC structure 07 is removed, the region between two of the spacers 03 once covered by the SOC structure 07 is exposed to form the second groove 10, and the first groove 08 is exposed after the remaining second SOC layer 09 is removed. As can be seen from FIG. 6, after removing the mandrel structure 02 in step 1, through step 7, the spacers 03 are spaced apart from each other and have half of the original linewidth structures provided by the first or the second groove alone.

(19) Furthermore, in this embodiment of the present disclosure, the remaining SOC structure and the remaining second SOC layer are removed in step 7 using a later one step in-situ ashing (ASH) method.

(20) In the present disclosure, the SOC layer is covered several times to refill the etched grooves and implement planarization, followed by etch-back of the SOC to remove most of the SOC materials containing the silicon-carbon polymer molecules, then the SOC is removed by means of a later one step in-situ ashing, finally removing residues, avoiding the problem of an excessive loss of a hard mask thickness, and facilitating the transfer of a lower layer pattern.

(21) To sum up, in the method of the present disclosure, cover twice SOC layer to refill the etched groove and implement planarization, followed by etch-back of the SOC to remove most of the SOC containing the silicon-carbon polymers, and then the SOC is removed by means of one step in-situ ashing, the problem of residue retention between sidewalls gap is improved finally, and avoiding the problem of an excessive loss of a hard mask thickness. Therefore, the present disclosure effectively overcomes various defects in the existing technique and has high industrial utilization value.

(22) The above embodiments merely illustrate the principle and effect of the present disclosure, rather than limiting the present disclosure. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the art without departing from the spirit and technical idea disclosed in the present disclosure shall still be covered by the claims of the present disclosure.