The present invention is a group-III nitride semiconductor wafer including a group-III nitride semiconductor film on a substrate for film formation, in which in a cross-sectional shape of a surface of the substrate for film formation of a chamfered portion of the substrate in a diameter direction, a chamfering angle (.sub.1) relative to the surface of the substrate is 21 or more and 23 or less, and on the surface of the substrate in a diameter direction, a chamfering width (X.sub.1) is 500 m or more and 1000 m or less, which is a distance between an outer peripheral end portion of the substrate for film formation and an inner peripheral end portion of the chamfered portion. Thereby, the group-III nitride semiconductor wafer, in which the group-III nitride semiconductor film is provided on the substrate for film formation, and the method for producing the same are provided.

A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.

A wafer processing method is disclosed. A second wafer is bonded to a first wafer. The rear surface of the second wafer is subjected to a first grinding process, thereby thinning the second wafer to a first thickness. A sacrificial layer is formed on the rear surface of the second wafer. A one-step wafer edge trimming process is then performed to remove an outer edge region of the sacrificial layer and the second wafer in one-step cut using a blade. The sacrificial layer is removed from the rear surface of the second wafer.

A method of processing a bonded wafer formed by bonding a first wafer and a second wafer to each other via a bonding layer includes a coordinate generating step of generating coordinates of an undersurface position of the first wafer, the undersurface position being to be irradiated with laser beams, such that an end position of a crack extending from modified layers formed within the first wafer is located at an outer circumference of the bonding layer, and a modified layer forming step of forming a plurality of modified layers in a ring shape by irradiating the coordinates generated in the coordinate generating step with the laser beams of a wavelength transmissible through the first wafer.

A processing method of a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part is to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In the forming the modified layers, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer in a direction from an inner side of the first wafer toward an outer side thereof, so that the plurality of ring-shaped modified layers are formed in a form of descending stairs.

The present description concerns a method of manufacturing a first wafer, intended to be assembled to a second wafer by molecular bonding, including the successive steps of: forming a stack of layers at the surface of a substrate; and successive chemical etchings of the edges of said layers from the layer of the stack most distant from the substrate, across a smaller and smaller width.

Semiconductor processing methods and apparatuses are provided. Some methods include providing a first wafer to a processing chamber, the first wafer having a thickness, a beveled edge, a first side, and a plurality of devices formed in a device area on the first side, the device area having an outer perimeter, depositing an annular ring of material on the first wafer, the annular ring of material covering a region of the beveled edge and the outer perimeter of the device area, and having an inner boundary closer to the center point of the first wafer than the outer perimeter, bonding a second substrate to the plurality of devices and to a portion of the annular ring of material, and thinning the thickness of the first wafer.

A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.

A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device; and directing a chemical fluid to impinge the upper surface of the device substrate so as to remove an edge portion of the device substrate.

Provided is a substrate processing method, the method including: a substrate polishing operation of polishing a substrate; after the polishing operation, a treatment solution supplying operation of supplying a treatment solution containing a polymer and a volatile solvent onto the rotating substrate; after the treatment solution supplying operation, a liquid film forming operation of volatilizing the volatile solvent in the treatment solution to form a liquid film; and after the liquid film forming operation, an edge removing operation of removing the liquid film formed on an edge portion of the substrate and the edge portion of the substrate.