A method for manufacturing a wafer from an ingot includes: holding the ingot; applying a laser beam having a wavelength that transmits through the ingot from a front surface of the ingot and positioning a focal point of the laser beam at a position deeper than the front surface of the ingot to form a modified region, and relatively feeding the ingot and the focal point for processing to form a separation layer including a plurality of the modified regions inside the ingot; separating, from the ingot, a workpiece including the front surface of the ingot as the wafer, with the separation layer as a start point; and grinding a separation surface of the wafer to remove the modified region. In the applying, a depth of the focal point forming the modified region is changed to form the separation surface into a three-dimensional shape rather than a horizontal surface.

A grinding wheel includes a wheelbase including an exterior wall, an inner surface positioned radially within the exterior wall, the inner surface defining a central opening extending axially through the wheelbase, an end wall extending between the inner surface and the exterior wall, and a protruding wall extending axially from the end wall and circumferentially about the central opening. The inner surface defines an inner groove extending around the central opening. The grinding wheel further includes abrasive members attached to the wheelbase and extending axially outward from the end wall.

A method, wherein a III-nitride-on-engineered substrate is provided. The III-nitride-on-engineered substrate includes a III-nitride epitaxial material. The III-nitride epitaxial material includes a frontside, a backside, and a III-nitride epitaxial region free of grind damage. The III-nitride-on-engineered substrate includes an engineered substrate on the backside of the III-nitride epitaxial material. The engineered substrate includes a non-crystalline substrate. The engineered substrate is removed from the backside of the III-nitride epitaxial material, thereby exposing the III-nitride epitaxial region free of grind damage.

A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modified measured trace.

A wafer processing method is disclosed. A second wafer is bonded to a first wafer. The rear surface of the second wafer is subjected to a first grinding process, thereby thinning the second wafer to a first thickness. A sacrificial layer is formed on the rear surface of the second wafer. A one-step wafer edge trimming process is then performed to remove an outer edge region of the sacrificial layer and the second wafer in one-step cut using a blade. The sacrificial layer is removed from the rear surface of the second wafer.

A method of processing a bonded wafer formed by bonding a first wafer and a second wafer to each other via a bonding layer includes a coordinate generating step of generating coordinates of an undersurface position of the first wafer, the undersurface position being to be irradiated with laser beams, such that an end position of a crack extending from modified layers formed within the first wafer is located at an outer circumference of the bonding layer, and a modified layer forming step of forming a plurality of modified layers in a ring shape by irradiating the coordinates generated in the coordinate generating step with the laser beams of a wavelength transmissible through the first wafer.

A processing method of a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part is to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In the forming the modified layers, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer in a direction from an inner side of the first wafer toward an outer side thereof, so that the plurality of ring-shaped modified layers are formed in a form of descending stairs.

A semiconductor device has a semiconductor wafer. A trench is formed through an active surface of the semiconductor wafer between a first semiconductor die and a second semiconductor die. An encapsulant is deposited in the trench. A back surface of the semiconductor wafer opposite the active surface is backgrinded using a rough grinder to expose the encapsulant. The back surface of the semiconductor wafer is backgrinded using a fine grinder. The fine grinder removes approximately 20 m of thickness from the semiconductor wafer. Back-end manufacturing is performed on the wafer after depositing the encapsulant and before backgrinding using the rough grinder.

A grinding apparatus capable of easily processing an end surface of a diamond substrate into a planar surface, where the grinding apparatus includes a holding unit for holding the diamond substrate, a grinding unit including a grinding tool for grinding the end surface of the diamond substrate held by the holding unit, and a grinding feed unit for grinding-feeding the grinding unit in a direction that brings the grinding unit closer to and away from the end surface of the diamond substrate held by the holding unit. The grinding tool has a base and a grinding blade mounted on the base. The grinding blade is made of iron and acts on the end surface of the diamond substrate to cause a reaction between the iron and carbon of diamond and generate a compound containing austenite, thereby grinding the end surface of the diamond substrate.

A method for fabricating semiconductor device includes the steps of first providing a first wafer and a second wafer, performing a first dicing process to separate the first wafer into first dies, bonding the first dies onto the second wafer, forming a first molding layer around the first dies, forming first bumps on the first dies, performing a second dicing process to separate the second wafer for forming second dies, and then bonding the first dies onto a third wafer.