A method for forming a semiconductor device includes followings. A metal layer is formed to embedded in a first dielectric layer. An etch stop layer is formed over the metal layer and the first dielectric layer. A second dielectric layer is formed over the etch stop layer. A portion of the second dielectric layer is removed to expose a portion of the etch stop layer and to form a via by a dry etching process. The portion of the etch stop layer exposed by the second dielectric layer is removed to expose the metal layer and to form a damascene cavity by a wet etching process. A damascene structure is formed in the damascene cavity.

A method for filling a gap in a semiconductor structure includes: forming the gap between two raised portions of the semiconductor structure, the gap having a bottom surface and two lateral surfaces each extending upwardly from the bottom surface along one of the raised portions to terminate at an upper surface of a corresponding one of the raised portions; and forming a filler element in the gap in a bottom-up manner that avoids the filler element being formed laterally.

In an embodiment, a method includes: forming an integrated circuit die, forming the integrated circuit die comprising: forming an interconnect structure over a front side of a substrate, the interconnect structure comprising a photonic component and a heater, the substrate comprising a first dielectric layer over a semiconductor substrate; removing the semiconductor substrate to expose a back side of the first dielectric layer; forming a second dielectric layer over the back side of the first dielectric layer; forming a redistribution structure over the second dielectric layer, the redistribution structure extending through the first dielectric layer and the second dielectric layer to be electrically connected to the interconnect structure; and forming an electrical connector over the redistribution structure; attaching a package substrate to the electrical connector; and attaching an electronic die over the interconnect structure and over the front side of the package substrate.

Composite IC die structures comprising a first IC die that has a first region directly bonded to a second IC die across a hybrid-bond interface and a topographic feature extending from a second region of the first IC die. In some examples, a hybrid bond interface is fabricated prior to forming a topographic IC die feature. In other examples, a hybrid bond interface is fabricated after forming a topographic IC die feature. A PIC die comprising a planar optical waveguide further includes an optical coupler protruding from a region of the die. In another region of the PIC die metallization features are embedded with a dielectric material suitable for forming a hybrid bond with a surface of an EIC die. Scaling of the directly bonded interconnections between the PIC and EIC die may facilitate further disintegration of the optical and electrical domains within a heterogenous chip/chiplet assembly.

A method for manufacturing a semiconductor stack structure with ultra thin die includes manufacturing semiconductor wafers, wherein a stop layer structure formed by ion implantation is formed in the semiconductor substrate, and the conductive structures are formed to connect the dielectric stop layer and the redistribution layer of the semiconductor wafers. A bonding layer with conductive pillars is formed on the redistribution layer of another semiconductor wafer, and die sawing is performed to form multiple batches of dies. The bonding layers of a batch of dies is bonded to the exposed dielectric stop layers of the semiconductor wafers by hybrid bonding. An encapsulant covers the batch of dies, and part of the encapsulant, part of the semiconductor substrate and part of the stop layer structure of each die are removed to expose the dielectric stop layer and conductive structures of this batch of dies for bonding next batch of dies.

A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.

In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.

A semiconductor device includes: a first conductive structure that comprises a first portion having sidewalls and a bottom surface, wherein the first conductive structure is embedded in a first dielectric layer; and an isolation layer comprising a first portion and a second portion, wherein the first portion of the isolation layer lines the sidewalls of the first portion of the first conductive structure, and the second portion of the isolation layer lines at least a portion of the bottom surface of the first portion of the first conductive structure.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a high resistance impedance layer between a gate and a first metal structure in a vertical direction, wherein the first metal structure comprises at least one equipotential first metal and at least one non-equipotential first metal, wherein the equipotential first metal and the high resistance impedance layer have the same potential, the non-equipotential first metal and high resistance impedance layer have not the same potential, and the non-equipotential first metal and the high resistance impedance layer do not overlap in the vertical direction, and a minimum distance, between an edge of the high resistance impedance layer and an edge of the non-equipotential first metal in a horizontal direction perpendicular to the vertical direction, is larger than a size of a random defect.

A semiconductor structure including a middle-of-line contact, a backside power rail, and a contact via extending between the middle-of-line contact and the backside power rail, wherein the contact via comprises a first portion having a negative tapered profile and a second portion having a positive tapered profile.