H10W44/209

Mixed dielectric materials for improving signal integrity of integrated electronics packages

Novel tools and techniques are provided for implementing mixed dielectric materials for improving signal integrity of integrated electronics packages or semiconductor packages. In various embodiments, a substrate for a semiconductor device includes: a first layer made of a first material; a second layer made of a second material; and a third layer disposed between the first and second layers, and that is made of a third material different from the first and second materials. In some cases, the first, second, and third layers each contains a plurality of gas-filled regions (e.g., but not limited to, an aerogel core of the third layer and/or polymer resin matrix embedded with hollow silica spheres or aerogel spheres of the first and second layers, or the like). Coaxial ground shields around signal lines in the substrate can be used to improve signal integrity. High dielectric constant lossy lines between signal lines can reduce crosstalk.

CIRCUIT PACKAGE
20260018524 · 2026-01-15 ·

One example discloses a circuit package, including: wherein the circuit package is configured to include a circuit; a brick having a first set of vias and a second set of vias; wherein the first set of vias are configured to be filled with a first material; wherein a first end of the first material is configured to be electrically coupled to the circuit; wherein a second end of the material is configured to form an electrical terminal on an external surface of the circuit package; and wherein the second set of vias are configured to be filled with a second material different from the first material.

HIGH DENSITY DEVICE PACKAGE AND PACKAGING TECHNIQUE THEREOF
20260026400 · 2026-01-22 ·

A high-density integrated device package may include two or more primary device dies arranged along a first plane, an inductor comprising an inductor core and an inductor coil, the inductor being fixedly connected to at least one of the primary device dies, and a dielectric substrate arranged along a second plane which is substantially perpendicular to the first plane. The integrated device package further includes a secondary device die (e.g., a power IC) electrically connected to the dielectric substrate such that an orientation of the secondary device die is substantially perpendicular to that of the two or more primary device dies, wherein the dielectric substrate is fixedly connected to the inductor core, and wherein the dielectric substrate is electrically connected to at least one of the primary device dies by an edge connector.

High-frequency module and communication device

A possible benefit of the present disclosure is to further improve a heat dissipation property of an electronic component. A high-frequency module includes a mounting substrate, a filter (for example, a transmission filter), a resin layer, a shielding layer, and a metal member. The resin layer covers at least a portion of an outer peripheral surface (for example, an outer peripheral surface) of the filter. The shielding layer covers at least a portion of the resin layer. The metal member is disposed at a first principal surface of the mounting substrate. The metal member is connected to a surface of the filter on the opposite side from the mounting substrate, the shielding layer, and the first principal surface of the mounting substrate.

DOHERTY AMPLIFIER
20260058609 · 2026-02-26 · ·

A Doherty amplifier includes a carrier amplifier and a peak amplifier. Each of the carrier amplifier and the peak amplifier is a differential amplifier including a first phase amplifier and a second phase amplifier. The Doherty amplifier also includes a balun configured to synthesize an output signal of the carrier amplifier and an output signal of the peak amplifier. The carrier amplifier and the peak amplifier are formed in an integrated circuit. The balun is formed on a printed wiring board on which the integrated circuit is mounted.

Semiconductor package including a redistribution substrate and a pair of signal patterns

Disclosed is a semiconductor package comprising a redistribution substrate and a semiconductor chip on the redistribution substrate. The redistribution substrate includes a plurality of first conductive patterns including a pair of first signal patterns that are adjacent to each other, and a plurality of second conductive patterns on surfaces of the first conductive patterns and coupled to the first conductive patterns. The second conductive patterns include a ground pattern insulated from the pair of first signal patterns. The ground pattern has an opening that penetrates the ground pattern. When viewed in plan, the pair of first signal patterns overlap the opening.

Radio frequency (RF) switch with drain/source contacts

The present disclosure is directed to conductive structures that may be utilized in a radio-frequency (RF) switch. The embodiments of the conductive structures of the present disclosure are formed to balance the on resistance (R.sub.on) and the off capacitance (C.sub.off) such that the R.sub.on.Math.C.sub.off value is optimized such that the conductive structures are relatively efficient as compared to conventional conductive structures within conventional RF switches. For example, the conductive structures include various metallization layers that are stacked on each other and spaced apart in a selected manner to balance the R.sub.on and the C.sub.off as to optimize the R.sub.on.Math.C.sub.off figure of merit as a lower R.sub.on.Math.C.sub.off is preferred.

Semiconductor device package

The present disclosure provides a semiconductor device package. The semiconductor device package includes a first antenna pattern disposed at a first elevation and a second antenna pattern disposed at a second elevation different from the first elevation. The first antenna pattern and the second antenna pattern define an air cavity. The semiconductor device package also includes a circuit layer. The air cavity is between the first antenna pattern, the second antenna pattern, and the circuit layer.

CHIP TO CHIP DIRECT PROXIMITY WIRELESS COUPLING

Disclosed herein are devices, systems, and methods related to edge couplers for providing wireless channel interconnects between edges of chiplets, components, modules, devices, packages, SoCs, etc. Such edge couplers may be formed from a stack of multiple layers and a core arranged between layers of the stack. A driven via extends from at least one feed layer of the stack of multiple layers into the core, wherein the driven via is isolated from ground. A plurality of grounded through-hole vias are grounded, extend from at least one ground layer of the stack, and traverse through the core, wherein the plurality of grounded through-hole vias partially surround the driven via.

Method for making electronic package

A method for making an electronic package is provided. The method includes providing a substrate strip comprising substrate assemblies, each substrate assembly comprises a first substrate and a second substrate connected to the first substrate via a flexible link, the first substrate comprises a first mounting surface, the second substrate comprises a second mounting surface that is not at a same side of the substrate assembly as the first mounting surface; disposing the substrate strip on a first carrier; attaching a first electronic component onto the first mounting surface; disposing the substrate strip on a second carrier with a plurality of cavities, the first electronic component is received within one of the plurality of cavities; attaching a second electronic component onto the second mounting surface; singulating the substrate assemblies from each other; and bending the flexible link to form an angle between the first substrate and the second substrate.