Analyte sensor devices and methods for fabricating analyte sensor devices are presented here. In accordance with certain embodiments, a device for detecting and/or measuring one or more analytes in fluid includes a substrate and one or more analyte sensors disposed on and/or in the substrate. Further, the device includes an integrated circuit disposed on and/or in the substrate. The integrated circuit is electrically integrated with the analyte sensors.

A laminate substrate for an RF application includes: a first metal layer in which is formed a first slot and a transmission line penetrating into the first slot; a second metal layer comprising a second laterally closed slot; a third metal layer comprising a third laterally closed slot; a fourth metal layer comprising a fourth slot; a dielectric layer being arranged between each metal layer; the second slot, the third slot, and the fourth slot forming a vertical RF feedthrough in the substrate; at least one of the third metal layer or the fourth metal layer having a portion protruding, respectively, into the third slot or into the fourth slot.

A radio frequency (RF) device includes at least one RF chip, including a local oscillator configured to generate an RF signal. The RF device further includes an RF signal path coupling an output of the at least one RF chip and an input of the at least one RF chip, wherein the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip into the input of the at least one RF chip. The RF device further includes a processing unit coupled to the input of the at least one RF chip and configured to perform in a first mode at least one of testing, monitoring or calibrating the at least one RF chip based on the generated RF signal.

A package structure includes at least one integrated circuit component, an insulating encapsulation, and a redistribution structure. The at least one integrated circuit component includes a semiconductor substrate, an interconnection structure disposed on the semiconductor substrate, and signal terminals and power terminals located on and electrically connecting to the interconnection structure. The interconnection structure is located between the semiconductor substrate and the signal terminals and between the semiconductor substrate and the power terminals, and where a size of the signal terminals is less than a size of the power terminals. The insulating encapsulation encapsulates the at least one integrated circuit component. The redistribution structure is located on the insulating encapsulation and electrically connected to the at least one integrated circuit component.

Disclosed is silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.

One example includes a method for fabricating a substrate-integrated waveguide (SIW). The method includes forming a first metal layer on a carrier surface. The first metal layer can extend along an axis. The method also includes forming a first metal sidewall extending from a first edge of the first metal layer along the axis and forming a second metal sidewall extending from a second edge of the first metal layer opposite the first edge along the axis to form a trough extending along the axis. The method also includes providing a dielectric material over the first metal layer and over the first and second metal sidewalls. The method further includes forming a second metal layer over the dielectric material and over the first and second metal sidewalls. The second metal layer can extend along the axis to enclose the SIW in all radial directions along the axis.

The present disclosure provides an electronic device. The electronic device includes an electronic component and an antenna component. The antenna component is disposed over the electronic component and defines a cavity configured to accommodating a component to adjust an impedance matching between the electronic component and the antenna component.

A semiconductor device has a substrate and a first electrical component disposed over the substrate. An encapsulant is deposited over the first electrical component. A shielding layer is formed over the encapsulant. The shielding layer is patterned to form a conductive trace and a contact pad. A board-to-board (B2B) connector is disposed over the encapsulant and electrically coupled to the substrate by the conductive trace.

Embodiments disclosed herein comprise package substrates and methods of forming such package substrates. In an embodiment, a package substrate comprises a core, where the core comprises glass. In an embodiment, an opening if formed through the core. In an embodiment, a magnetic region is disposed in the opening.

A semiconductor device includes a transmission device and a reception device generating a demodulating signal by receiving the transmission signal via the measuring object from the antenna, and performing a processing to the demodulating signal. The transmission device is configured to start modulation at a first phase. The reception device stores a first phase and a physical quantity corresponding to a phase change amount in advance, estimate modulating signal start timing at which the reception signal switches from a non-modulation period to a modulation period based on a waveform of the demodulating signal; calculate a second phase that is a phase at the modulation start timing, calculates a variation to the second phase based on the stored first phase; and determine a physical quantity corresponding to the variation based on the physical quantity corresponding to a stored phase change amount.