A measurement apparatus includes: an input part into which a signal according to a state of a measurement target is input; a measurement part configured to measure the state of the measurement target from the signal input to the input part, and generate, when the measurement of the state of the measurement target is completed, a switching instruction signal instructing switching a multiplexer configured to selectively output the signal; and an output part configured to output the switching instruction signal generated by the measurement part.

A substrate inspection apparatus includes a light source unit, a pulsed beam matching unit, a substrate support unit, an incidence angle adjusting unit, and a detecting unit. The light source unit emits first and second laser beams. The pulsed beam matching unit matches the first and second laser beams to superimpose a pulse of the first laser beam on a pulse of the second laser beam in time and space. The incidence angle adjusting unit adjusts angles of incidence of the matched first laser beam and second laser beams to irradiate the first laser beam and the second laser beam on the substrate, and mixes the first and second laser beams to generate an evanescent wave on the substrate. The evanescent wave generates scattered light due to a defect of the substrate. The detecting unit detects the scattered light generated due to the defect of the substrate.

Provided is a semiconductor element including a semiconductor substrate; a semiconductor layer laminated to the semiconductor substrate, and having a circuit formed within the semiconductor layer; a conductive layer disposed on an opposite side of the semiconductor layer from the semiconductor substrate and including a part electrically connected to the circuit; and a conductive portion disposed between the semiconductor layer and the conductive layer, and electrically connected to the conductive layer. The conductive layer includes a check pattern not electrically connected to the circuit, and the conductive portion includes a superimposition portion superimposed on the check pattern as viewed in a thickness direction of the semiconductor substrate.

One example discloses a degradation circuit, including: a first structure configured to be coupled to an integrated circuit (IC); a second structure, coupled to the first structure, and configured to be coupled to the IC; wherein together the first and second structures form a degradation detection element; and a controller, coupled to the degradation detection element, and configured to set an operational state of the IC based on the degradation detection element.

Assemblies, system, methods, and devices for monitoring characteristics of a substrate disposed in a recess within a processing chamber. An assembly includes an enclosure structure forming an interior volume configured to support a substrate disposed within the interior volume. The substrate may be selectively removed from the enclosure structure. The enclosure structure may include an upper interior surface and a lower interior surface located below the upper interior surface. The interior volume is configured to direct a first mass transport of a reactive species to a first surface of the substrate, the reactive species corresponding to a substrate process. A first portion of the lower interior surface is configured to support the substrate. A second portion of the lower interior surface forms a channel configured to provide a second mass transport of the reactive species to a second surface of the substrate opposite the first surface.

A semiconductor package may include a first semiconductor die having a first width; a second semiconductor die on the first semiconductor die, the second semiconductor die having a second width that is smaller than the first width; and a mold layer at least partially covering a side surface of the second semiconductor die, and a top surface of the first semiconductor die, wherein the first semiconductor die comprises at least one first detection pattern, the at least one first detection pattern being on the top surface of the first semiconductor die and in contact with a bottom surface of the mold layer.

The present disclosure provides a method for manufacturing a semiconductor package. The method includes disposing a first semiconductor substrate on a temporary carrier and dicing the first semiconductor substrate to form a plurality of dies. Each of the plurality of dies has an active surface and a backside surface opposite to the active surface. The backside surface is in contact with the temporary carrier and the active surface faces downward. The method also includes transferring one of the plurality of dies from the temporary carrier to a temporary holder. The temporary holder only contacts a periphery portion of the active surface of the one of the plurality of dies.

An example integrated circuit includes a plurality of cells positioned in a plurality of rows extending in a first horizontal direction. The plurality of cells include a first cell disposed in a first row. The first cell comprises a first active pattern extending in the first horizontal direction and a first backside pattern overlapping the first active pattern in a vertical direction and extending in the first horizontal direction in a first backside wiring layer below the first active pattern. The first backside pattern is removed from a first inspection region that overlaps the first active pattern and extends in a second horizontal direction.

The invention provides an overlay mark, which comprises four sub-overlay marks, which together form an overlay mark, wherein each sub-overlay mark comprises a substrate and defines an inner region and an outer region, a plurality of first mandrel structures located in the inner region and a plurality of second mandrel structures located in the outer region, wherein the first mandrel structures are arranged in parallel with each other, and the second mandrel structures are also arranged in parallel with each other, and a plurality of strip-shaped mask layers are located in the inner region, wherein both sides of any first mandrel structure comprise a strip-shaped mask layer respectively. In addition, the invention also provides an overlay method of the semiconductor structure using the overlay mark.

A simulated inner spacer reliability evaluation component includes a substrate having a surface, at least one pedestal coupled to the surface of the substrate, at least one pinched off simulated inner spacer coupled to the at least one pedestal, and a metal layer coupled to the at least one pinched off simulated inner spacer. The at least one pinched off simulated inner spacer defines at least one indent located above the at least one pedestal.