The present disclosure provides a package structure. The package structure includes: a first die having a front surface and a back surface opposite to the front surface; and a first thermal management structure over the back surface. The first thermal management structure includes: a first copper-phosphorous alloy layer thermally coupled to and covering an entirety of the back surface of the first die.

A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; a printed circuit board provided over and electrically connected to the semiconductor chip; a first external connection terminal electrically connected to the conductive plate and extending upward from the conductive plate; a first conductive block provided to surround an outer circumference of the first external connection terminal in an insulated state; and a sealing member provided to seal the semiconductor chip, the printed circuit board, and the first conductive block.

The present disclosure provides a package structure. The package structure includes: a first die having a first front surface and a first back surface opposite to the first front surface; a second die having a second front surface and a second back surface opposite to the second front surface, wherein the first back surface faces the first front surface; and a first thermal management structure over the first back surface. The first thermal management structure includes a first copper-phosphorous alloy layer thermally coupled to the first back surface.

According to the embodiment of the present invention, a semiconductor device comprises a first nanodevice including a plurality of first transistors. The first nanodevice includes a first placeholder. A backside interlayer dielectric (BILD) layer is in direct contact with a first portion of sidewalls of the first placeholder. The BILD layer is comprised of a first dielectric material. A backside thermal dissipation dielectric is in direct contact with a backside surface of the BILD layer. The backside thermal dissipation dielectric is comprised of a second dielectric material.

A semiconductor package and a semiconductor package assembly are provided. The semiconductor package includes an interconnect structure, a chip, a redistribution layer (RDL), a molding compound, and through mold vias (TMVs). The chip is arranged on and coupled to the interconnect structure. The RDL is arranged on and coupled to the chip. The molding compound is arranged on the interconnect structure and encapsulates the chip and the RDL. The TMVs pass through the molding compound and are connected between the RDL and the interconnect structure. The chip includes a back-side connect structure, a transistor layer, a front-side connect structure and a carrier. The back-side connect structure is connected to the interconnect structure. The transistor layer is located on the back-side connect structure. The front-side connect structure is located on the transistor layer. The first carrier is located on and coupled to the interconnect structure.

A 3D integrated circuit package is provided. The 3D integrated circuit package includes a substrate structure, a first interposer, a second interposer, a first semiconductor die, and a second semiconductor die. The substrate structure has a first surface and a second surface opposite to the first surface. The first interposer is disposed over the first surface of the substrate structure. The second interposer is disposed over the first interposer. The first and the second semiconductor dies are disposed over the first surface of the substrate structure, and the first and the second semiconductor dies are bonded to two opposite sides of the second interposer, respectively. The substrate structure includes a thermal enhancement portion, and at least one of a thermal conductivity or a geometry of the thermal enhancement portion is different from that of other portions of the substrate structure.

A thermal interface layer includes pluralities of first and second particles dispersed in a polymeric binder at a total loading V in a range of about 40 volume percent to about 70 volume percent. The first and second particles have different compositions. The first particles include one or more of iron or nickel. The second particles include one or more of aluminum, magnesium, silicon, copper, or zinc. The thermal interface layer has a thermal conductivity in a thickness direction of the thermal interface layer in units of W/mK of at least K=5.10.17 V+0.002 V.sup.2.

A heat conductive sheet having excellent adhesion between an acrylic resin layer and a supporting sheet is provided. The heat conductive sheet includes a heat conductive resin layer including a heat conductive acrylic resin composition; and a supporting resin layer (supporting sheet) containing a polyvinyl acetal resin and a styrene-vinyl isoprene block copolymer. Crosslinking of the supporting sheet with acrylic monomers of the acrylic heat conductive resin layer enables improvements in adhesion between the heat conductive resin layer and the supporting sheet.

A direct cooling type power module comprising, an enclosure filled with an insulating fluid, a power semiconductor device disposed inside the enclosure and a bonding unit comprising a porous layer, and a thermally conductive layer to which the power semiconductor device is bonded, and allowing the power semiconductor device to exchange heat with the insulating fluid by the porous layer and the thermally conductive layer.

A hybrid integrated heat spreader suitable for an integrated circuit (IC) die package. The hybrid integrated heat spreader includes a top sheet material and a sealant interface material located where the heat spreader is to contact an assembly substrate. The sealant interface material may offer greater adhesion to a sealant employed between the interface material and the package substrate. In some examples, the sealant interface material has a greater surface roughness and/or a different composition than a surface of the integrated heat spreader that is in close thermal contact with an IC die through a thermal interface material. With the sealant interface material improving adhesion, the sealant may have a higher bulk modulus, enabling the integrated heat spreader to impart greater stiffness to the IC die package assembly.