A system includes: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: an upper phase multi-chip module including: a low-voltage upper phase controller; a high-voltage upper phase A controller; an upper phase A galvanic isolator connecting the low-voltage upper phase controller to the high-voltage upper phase A controller; a high-voltage upper phase B controller; an upper phase B galvanic isolator connecting the low-voltage upper phase controller to the high-voltage upper phase B controller; a high-voltage upper phase C controller; and an upper phase C galvanic isolator connecting the low-voltage upper phase controller to the high-voltage upper phase C controller.

A two-sided interconnected embedded chip packaging structure includes a first insulating layer and a second insulating layer. The first insulating layer includes a first conductive copper column layer penetrating through the first insulating layer in a height direction and a first chip located between adjacent first conductive copper columns, and the first chip is attached to the inside of the lower surface of the first insulating layer. The second insulating layer includes a first conductive wire layer and a heat radiation copper surface which are located in the upper surface of the second insulating layer, the first conductive wire layer is provided with a second conductive copper column layer, the first conductive copper column layer is connected with the first conductive wire layer, and the heat radiation copper surface is connected with the reverse side of the first chip.

A heat radiating structure includes a mesh which abuts on a surface of a die of a GPU and a copper plate which is equipped with a recessed part into which the mesh fits and which sandwiches and holds the mesh together with the surface of the die. The mesh includes a heat generating element abutment range part into which a liquid metal is impregnated and which abuts on the surface of the die and receives heat from the die and a heat generating element non-abutment region part which is contiguous to the heat generating element abutment range part and does not abut on the surface of the die. The heat generating element non-abutment range part is fixed to the copper plate with the use of a sponge tape. The heat generating element abutment range part is shaped to protrude from the heat generating element abutment range part.

A package structure and method for forming the same are provided. The package structure includes a cooling substrate formed on a base substrate, and the cooling substrate includes a cooling device. The package structure includes a packaged semiconductor device formed on the cooling substrate, and the packaged semiconductor device includes a first die, and the cooling device is directly below the first die.

Provided is a semiconductor device with a configuration capable of ensuring insulation properties between terminals having different potentials and arranged with an insulating layer interposed. The semiconductor device includes: a first terminal; a second terminal having a part opposed to the first terminal and another part provided with a first opening not opposed to the first terminal; and an insulating layer including a body part interposed between the first terminal and the second terminal opposed to each other and a first protrusion connected to the body part and inserted to the first opening.

This copper/ceramic assembly includes: a copper member consisting of copper or a copper alloy; and a ceramic member consisting of silicon nitride, wherein the copper member and the ceramic member are bonded. At a bonded interface between the ceramic member and the copper member, an active metal nitride layer is formed on a side of the ceramic member. In a region extending by 10 m from the active metal nitride layer toward a side of the copper member, an area rate of an active metal compound containing Si and an active metal is 10% or less. A ratio P.sub.A/P.sub.B of an area rate P.sub.A of the active metal compound in a peripheral part region of the copper member to an area rate P.sub.B of the active metal compound in a central part region of the copper member is in a range of 0.7 or more and 1.4 or less.

Exemplary embodiments are disclosed of thermal interface solutions for sliding surfaces. In an exemplary embodiment, a thermal interface material assembly includes a substrate having opposite first and second surfaces. An antifriction layer is along the first surface of the substrate. A thermal interface material is along the second surface of the substrate, such that the substrate is between the antifriction layer and the thermal interface material. The antifriction layer is configured to slide along in contact with a first surface of a first component when the thermal interface material assembly is along a second surface of a second component and when the first and second surfaces are slidably moved relative to each other.

Exemplary embodiments are disclosed of thermal interface solutions for sliding surfaces. In an exemplary embodiment, a thermal interface material assembly includes a substrate having opposite first and second surfaces. An antifriction layer is along the first surface of the substrate. A thermal interface material is along the second surface of the substrate, such that the substrate is between the antifriction layer and the thermal interface material. The antifriction layer is configured to slide along in contact with a first surface of a first component when the thermal interface material assembly is along a second surface of a second component and when the first and second surfaces are slidably moved relative to each other.

Electronic device comprising at least a first and a second branch, each branch including a first and a second transistor arranged in series to each other and formed in respective dice of semiconductor material. The dice are sandwiched between a first substrate element and a second substrate element. The first and the second substrate elements are formed each by a multilayer including a first conductive layer, a second conductive layer and an insulating layer extending between the first and the second conductive layers. The first conductive layers of the first and the second substrate elements face towards the outside of the electronic device and define a first and a second main face of the electronic device. The second conductive layer of the first and the second substrate elements is shaped so as to form contact regions facing and in selective electrical contact with the plurality of dice.

A system includes: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a first power module, the first power module including: a first substrate including a first conductive layer; a second substrate including a second conductive layer; a power switch between the first conductive layer and the second conductive layer, the power switch including a gate connection, wherein the power switch is configured to selectively electrically connect the first conductive layer to the second conductive layer based on a signal to the gate connection; and a point-of-use controller between the first conductive layer and the second conductive layer, the point-of-use controller configured to provide the signal to the gate connection to control the power switch.