Embodiments according to the present invention provide a growth substrate wafer for high-performance GaN switching power devices, comprising: a Si growth substrate; a first AlN nucleation layer formed on the Si growth substrate; and a plurality of SiOx protrusions (Protrusion) discontinuously spaced apart and arranged on the first AlN nucleation layer, wherein the surface of the first AlN nucleation layer is exposed in the regions between the plurality of SiOx protrusions.