There is provided a technique that includes a storage configured to store a process gas supplied from a supplier, a processing chamber configured to process a substrate, a plurality of gas flow paths that connect the storage and the processing chamber in parallel, a gas control mechanism including a plurality of valves respectively disposed in the plurality of gas flow paths, and a controller configured to be capable of controlling the gas control mechanism so as to perform a process including: (a1) storing the process gas in the storage; (a2) starting supply of the process gas in the storage into the processing chamber; (a3) stopping supply of the process gas in the storage into the processing chamber; and (b) changing conductance of gas in the gas flow paths by controlling opening degrees of the valves between the processing of (a2) and the processing of (a3).

A semiconductor package may include a first semiconductor die having a first width; a second semiconductor die on the first semiconductor die, the second semiconductor die having a second width that is smaller than the first width; and a mold layer at least partially covering a side surface of the second semiconductor die, and a top surface of the first semiconductor die, wherein the first semiconductor die comprises at least one first detection pattern, the at least one first detection pattern being on the top surface of the first semiconductor die and in contact with a bottom surface of the mold layer.

A method for manufacturing a semiconductor device according to an embodiment has a first film formation step, a second film formation step, and an oxidizing step. In the first film formation step, a first coating film made of silicon is formed on a surface of a base material made of silicon carbide. In the second film formation step, a second coating film is formed on a surface of the first coating film. In the oxidizing step, the first coating film is thermally oxidized from a surface side to form a third coating film. In the second film formation step, on a part of the first coating film, the second coating film is not formed, and the part is exposed. Alternatively, in the second film formation step, a film thickness of the second coating film formed on the part of the first coating film is smaller than a film thickness of the second coating film formed on a different part.

There is provided a SiC substrate including a biaxially oriented SiC layer, and, in a Si surface and a C surface of the SiC substrate, a difference between a maximum value k.sub.max and a minimum value k.sub.min of a Raman shift value is 0.50 cm.sup.1 or less. The Raman shift value is obtained by, in the Si surface, measuring the Raman shift value indicating a peak corresponding to a transverse acoustic branch of a Raman spectrum at 1 mm intervals on two straight lines passing through a central point of the Si surface and being orthogonal to each other, and, in the C surface, measuring the Raman shift value indicating a peak corresponding to a transverse acoustic branch of a Raman spectrum at 1 mm intervals on two straight lines passing through a central point of the C surface and being orthogonal to each other.

A film forming method includes: supplying a liquid to a concave portion of a substrate whose surface includes the concave portion and a convex portion which are adjacent to each other; and selectively forming a film on a top surface of the convex portion of the surface of the substrate by supplying a processing gas, which chemically changes the liquid, to the surface of the substrate, and moving the liquid from the concave portion to the top surface of the convex portion by a reaction between the processing gas and the liquid.

A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.

There is provided a technique that includes: (a) supplying a first gas containing a predetermined element to the substrate; (b) supplying a second gas containing carbon and nitrogen to the substrate; (c) supplying a nitrogen-containing gas activated by plasma to the substrate; (d) supplying an oxygen-containing gas to the substrate; and (e) forming a film containing at least the predetermined element, oxygen, carbon, and nitrogen on the substrate by: performing a cycle a first number of times of two or more, the cycle performing (a) to (d); or performing a cycle once or more, the cycle performing (a) to (d) in this order.

A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.

A method for depositing protective layers on a surface of a substrate includes conducting a plurality of ALD cycles in a first reaction chamber to deposit a first protective layer on the substrate. Each ALD cycle of the plurality of ALD cycles is conducted at a deposition temperature below about 100 C. and includes delivering a first precursor gas into the first reaction chamber containing the substrate. A reacting portion of the first precursor gas is absorbed onto a surface of the substrate to form a first sub-layer of the protective layer. A second precursor gas is delivered into the first reaction chamber containing the substrate, a reacting portion of the second precursor gas being absorbed onto the surface of the substrate to form a second sub-layer of the protective layer. Metrology analysis is performed on the substrate within a second reaction chamber.

Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.