A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substrate mounted on the substrate support unit through the gas distribution unit.

Methods of forming silicon nitride on a sidewall of a feature are disclosed. Exemplary methods include providing a substrate comprising a feature comprising a sidewall surface and a surface adjacent the sidewall surface, forming a silicon oxide layer overlying the sidewall surface and the surface adjacent the sidewall surface, using a cyclical deposition process, depositing a silicon nitride layer overlying the silicon oxide layer, and exposing the silicon nitride layer to activated species generated from a hydrogen-containing gas. Exemplary methods can additionally include selectively removing a portion of the silicon nitride layer. Structures formed using the methods and systems for performing the methods are also disclosed.

Methods for reducing contact resistance include performing a selective titanium silicide (TiSi) deposition process on a middle of the line (MOL) contact structure that includes a cavity in a substrate of dielectric material. The contact structure also includes a silicon-based connection portion at a bottom of the cavity. The selective TiSi deposition process is selective to silicon-based material over dielectric material. The methods also include performing a selective deposition process of a metal material on the MOL contact structure. The selective deposition process is selective to TiSi material over dielectric material and forms a silicide capping layer on the silicon-based connection portion. The methods further include performing a seed layer deposition process of the metal material on the contact structure.

A semiconductor chip and a semiconductor package, the semiconductor chip includes a semiconductor substrate; a through electrode penetrating the semiconductor substrate; a bonding pad including a first conductive pad connected to the through electrode, and a second conductive pad on a central portion of the first conductive pad, an outer portion of the first conductive pad protruding outwardly relative to a sidewall of the second conductive pad; and a pad insulating layer on the semiconductor substrate and surrounding a sidewall of the first conductive pad and the sidewall of the second conductive pad.

A semiconductor device includes a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe). An epi-silicon layer is disposed on a sidewall of the fin structure. The epi-silicon layer contains nitrogen. One or more dielectric liner layers are disposed on the epi-silicon layer. A dielectric isolation structure is disposed over the one or more dielectric liner layers.

A method for developing a passivation film on a substrate with less than 10 atomic % of hydrogen includes providing the substrate within a processing station of a substrate processing system. A resultant passivation film is formed with less than 10 atomic % of hydrogen on the substrate by performing the following steps of depositing a passivation film sub-layer on the substrate, where the passivation film sub-layer lays on a semiconductor device layer or directly on a previously deposited passivation film sub-layer, and after depositing the passivation film sub-layer, performing a post plasma treatment to the passivation film sub-layer with at least one of nitrogen and argon to reduce hydrogen content within the passivation film sub-layer.