A method for manufacturing a substrate including a region, which is mechanically decoupled from a support and has at least one component situated on the region; at least one recess being introduced on a front side of the substrate; an etching pattern being prepared on a back side of the substrate and etched anisotropically in such a manner, that vertical channels are produced on the back side of the substrate; and subsequently, a cavity being introduced at the back side of the substrate; the at least one recess on the front side of the substrate being connected to the cavity on the back side of the substrate; and in at least one region between the front side of the substrate and the cavity, at least two recesses or at least two segments of a recess being interconnected by at least one channel.

A method for manufacturing a micromechanical structure in the structural layer of a wafer by forming a first gap and a second gap depositing and patterning a first etching mask and a second etching mask on a horizontal face of the structural layer, etching trenches through the structural layer in the first and second unprotected areas which are not protected by the first etching mask or the second etching mask, coating at least the sidewalls of the trenches with a protective layer and removing the second etching mask at least from a second opening in the first etching mask, so that a temporarily protected area is exposed, and etching away the structural layer in the exposed temporarily protected area.

The present application provides a thin film getter structure having a miniature heater and a manufacturing method thereof, the thin film getter structure comprising: a substrate; a heater formed at a side of a main face of the substrate; and a getter thin film formed on a surface of the heater, wherein the heater comprises: a first insulating thin film; a thin film resistance formed on an upper surface of the first insulating thin film; and a second insulating thin film covering the thin film resistance, both ends of the thin film resistance being electrodes exposed from the second insulating thin film.

An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

The present disclosure relates to an optical scanner package comprising a scanner element, a lower substrate having an inner space, and a semi-spherical transmissive window. The semi-spherical transmissive window has different inclinations in an incident position thereof and in an emission position thereof, and interference caused by sub-reflection can thus be reduced. Since the incident angle α and the maximum emission angle β are small, anti-reflection coating design is easy, and light loss can be reduced. There is an advantage in that, even when the optical scanning angle (OSA) γ of a laser is large, the maximum emission angle β is small, and emitted laser light thus has a small change in characteristics. In addition, since there are curvatures on both sides of two axes, there is little restriction regarding the incident direction even in the case of two-axis driving.

In an example, a method of manufacturing a MEMS device includes forming a via. The method also includes depositing metal in the via and depositing a first layer of a non-photoactive organic polymer on the metal. The method includes baking the first layer of the non-photoactive organic polymer. The method also includes depositing a second layer of the non-photoactive organic polymer on the first layer of the non-photoactive organic polymer after baking the first layer of the non-photoactive organic polymer. The method includes baking the second layer of the non-photoactive organic polymer. The method also includes etching the first layer and the second layer of the non-photoactive organic polymer.

A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

A method for forming a MEMS structure for an inertial sensor from fused silica includes: depositing a conductive layer on one or more selected regions of a first surface of a fused silica substrate, and illuminating areas of the fused silica substrate with laser radiation in a pattern defining features of the MEMS structure for an inertial sensor. A masking layer is deposited at least on the one or more selected regions of the first surface of the fused silica substrate where the conductive layer has been deposited, such that the illuminated areas of the fused silica substrate remain exposed. A first etch of the exposed areas of the fused silica substrate is performed so as to selectively etch the pattern defining features of the MEMS structure for an inertial sensor.

A microelectromechanical (MEMS) microphone with membrane trench reinforcements and method of fabrication is provided. The MEMS microphone includes a flexible plate and a rigid plate mechanically coupled to the flexible plate. The MEMS microphone includes a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate. The stoppage member limits motion of the flexible plate. The rigid plate includes a reverse bending edge that includes a first lateral etch stop that includes a first corner radius and a second corner radius. The first corner radius is more than 100 nanometers and the second corner radius is more than 25 nanometers. Further, a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.

Micro-electro-mechanical systems and a preparation method thereof are provided. The micro-electro-mechanical systems include first fixed comb fingers, second fixed comb fingers, a support beam, a movable platform, and movable comb fingers. The first fixed comb fingers and the second fixed comb fingers are fastened to a substrate, and the first fixed comb fingers are electrically isolated from the second fixed comb fingers. Two ends of the support beam are fastened to the substrate, and the movable platform is coupled to the support beam. The movable comb fingers are coupled to the movable platform, and form a three-layer comb finger structure with the first fixed comb fingers and the second fixed comb fingers. This structure improves drive efficiency of the micro-electro-mechanical systems.