Disclosed are a transition metal dichalcogenide alloy and a method of manufacturing the same. A method of manufacturing a transition metal dichalcogenide alloy according to an embodiment of the present disclosure includes a step of depositing transition metal dichalcogenide on a substrate using atomic layer deposition (ALD); and a step of forming a transition metal dichalcogenide alloy by thermally treating the transition metal dichalcogenide with a sulfur compound.

Methods and devices that use alkali metal chalcohalides having the chemical formula A.sub.2TeX.sub.6, wherein A is Cs or Rb and X is I or Br, to convert hard radiation, such as X-rays, gamma-rays, and/or alpha-particles, into an electric signal are provided. The devices include optoelectronic and photonic devices, such as photodetectors and photodiodes. The method includes exposing the alkali metal chalcohalide material to incident radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material. A detector is configured to measure a signal generated by the electron-hole pairs that are formed when the material is exposed to incident radiation.

A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

A quantum nanomaterial having a bandgap that may be tuned to enable the quantum nanomaterial to detect IR radiation in selected regions including throughout the MWIR region and into the LWIR region is provided. The quantum nanomaterials may include tin telluride (SnTe) nanomaterials and/or lead tin telluride (Pb.sub.xSn.sub.1-xTe) nanomaterials. Additionally, a method of manufacturing nanomaterial that is tunable for detecting IR radiation in selected regions, such as throughout the MWIR region and into the LWIR region, is also provided.

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure:
A.sub.xM.sub.yCh.sub.z  Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.

A process for preparing alloy products is described using a self-sustaining or self-propagating SHS-type combustion process with point-source ignition, preferably a laser, in a pressurized vessel. Binary, ternary and quaternary alloys can be formed with control over polycrystalline structure and bandgap. Methods to tune the bandgap and the alloys formed are described. The alloy products may be doped. Preferably sulfides, tellurides or selenides are formed. Cooling during reaction takes place.

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.

Disclosed in the present invention is a nonlinear optical crystal. The chemical formula of the nonlinear optical crystal is MHgGeSe.sub.4, M being selected from Ba or Sr. The nonlinear optical crystal has no symmetrical center, belongs to an orthorhombic crystal system, and has a space group Ama2. The nonlinear optical crystal is an infrared nonlinear optical crystal, and has the advantages of great nonlinear optical effect, wide light transmitting band, high hardness, good mechanical properties, breakage resistance, deliquescence resistance, easiness in processing and preserving, etc. Also disclosed in the present invention are a method for preparing the nonlinear optical crystal and application thereof.

The electroluminescent element includes a QD layer and an electron transport layer. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The electron transport layer contains zinc oxide. A film thickness of the electron transport layer is 15 nm or more and 85 nm or less.

The electroluminescent element includes a QD layer and an electron transport layers. QD phosphor particles contained in the QD layer are nanocrystals containing zinc and selenium, or zinc, selenium, and sulfur. A fluorescent half width of the QD phosphor particles is 25 nm or less, and a fluorescent peak wavelength of the QD phosphor particles is 410 nm or more and 470 nm or less. The QD layer contains a surface modifier that protects surfaces of the quantum dots, and a weight ratio of the surface modifier to the QD phosphor particles is 0.115 and more and 0.207 or less.