A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

A coating liquid includes aluminum phosphate, a nonionic surfactant, and water and/or water-soluble solvent that dissolves or disperses the aluminum phosphate and the nonionic surfactant. An amount of the nonionic surfactant is preferably 1 vol % or more and 10 vol % or less. The nonionic surfactant is preferably at least one selected from the group consisting of ester, ether, alkylglycoside, octylphenol ethoxylate, pyrrolidone, and polyhydric alcohol. Applying such a coating liquid to a surface of a thermoelectric member, and drying and firing the coating liquid enables formation of a dense antioxidant film containing aluminum phosphate on the surface of the thermoelectric member.

A method for manufacturing a quantum dot film is provided. A substrate plate is provided. A plurality of quantum dot material layers capable of emitting light having different colors are sequentially formed on the substrate plate, wherein at least one of the quantum dot material layers includes a plurality of quantum dots. A local crosslinking process is performed on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer. A fluorescence quenching process is performed on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. A display panel and a method for manufacturing the same are also provided.

A method for manufacturing a quantum dot film is provided. A substrate plate is provided. A plurality of quantum dot material layers capable of emitting light having different colors are sequentially formed on the substrate plate, wherein at least one of the quantum dot material layers includes a plurality of quantum dots. A local crosslinking process is performed on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer. A fluorescence quenching process is performed on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. A display panel and a method for manufacturing the same are also provided.

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension, the method comprising the steps of; providing a continuous centrifuge apparatus; providing a suspension of submicron thickness laminar solid particles in a solid suspension; wherein the solid suspension comprises the submicron thickness solid particles in a liquid continuous phase; separating the solid suspension in the apparatus.

A system and a method of continuously separating submicron thickness laminar solid particles from a solid suspension, segregating the suspension into a submicron thickness particle fraction suspension and a residual particle fraction suspension, the method comprising the steps of; providing a continuous centrifuge apparatus; providing a suspension of submicron thickness laminar solid particles in a solid suspension; wherein the solid suspension comprises the submicron thickness solid particles in a liquid continuous phase; separating the solid suspension in the apparatus.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A.sup.1, and A.sup.2; and a shell covering the core. A.sup.1 is a Group V element, A.sup.2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A.sup.2, and includes indium and A.sup.1, and the second region includes indium, A.sup.1, and A.sup.2, and indium and A.sup.2 are alloyed with each other in the second region.