C01B19/04

QUANTUM DOT, METHOD OF PREPARING QUANTUM DOT, OPTICAL MEMBER INCLUDING QUANTUM DOT, AND ELECTRONIC DEVICE INCLUDING QUANTUM DOT

Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A.sup.1, and A.sup.2; and a shell covering the core. A.sup.1 is a Group V element, A.sup.2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A.sup.2, and includes indium and A.sup.1, and the second region includes indium, A.sup.1, and A.sup.2, and indium and A.sup.2 are alloyed with each other in the second region.

Quantum dot and method of producing the same; and wavelength converting member, lighting member, back light unit, and display device using quantum dot

Provided is a Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHIM is 25 nm or less. The quantum dot is preferably a na.nocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALS

Forming a two-dimensional Janus layer includes forming a layer of MX.sub.2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX.sub.2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.

SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALS

Forming a two-dimensional Janus layer includes forming a layer of MX.sub.2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX.sub.2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.

HOMOGENEOUS ANAEROBICALLY STABLE QUANTUM DOT CONCENTRATES

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

HOMOGENEOUS ANAEROBICALLY STABLE QUANTUM DOT CONCENTRATES

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

CORE-SHELL TYPE QUANTUM DOT, PREPARATION METHOD AND USE THEREOF
20210130683 · 2021-05-06 ·

The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.

CORE-SHELL TYPE QUANTUM DOT, PREPARATION METHOD AND USE THEREOF
20210130683 · 2021-05-06 ·

The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

2H TO 1T PHASE BASED TRANSITION METAL DICHALCOGENIDE SENSOR FOR OPTICAL AND ELECTRONIC DETECTION OF STRONG ELECTRON DONOR CHEMICAL VAPORS

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.