Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:
R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6  I
where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

A luminophore may have the general empirical formula X.sub.3A.sub.4Si.sub.3O.sub.8N.sub.2:E, where: X=Mg, Ca, Sr, Ba, Zn, or combinations thereof; A=Li, Na, K, Rb, Cs, Cu, Ag, or combinations thereof; Z=Al, Ga, B, or combinations thereof; and E=Eu, Ce, Yb, Mn, or combinations thereof.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30≤a/b≤1.3 and 0.30≤a+b≤0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.

A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A.sub.1+αBO.sub.x+αN.sub.y wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula A.sub.aB.sub.bO.sub.oN.sub.n, (o+n)/a<3.00 is satisfied.

An alkali metal amide is dissolved in a cyclic alkylene urea represented by the formula (1) (wherein each of R.sub.1 and R.sub.2 represents a C1 to C3 alkyl group, and R.sub.3 represents a C1 to C4 alkylene group).

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A component for a lithium battery including a first layer including a lithium garnet having a porosity of 0 percent to less than 25 percent, based on a total volume of the first layer; and a second layer on the first layer and having a porosity of 25 percent to 80 percent, based on a total volume of the second layer, wherein the second layer is on the first layer and the second layer has a composition that is different from a composition of the first layer.

A decoration member for a cosmetic container including: a color expression layer having a light reflecting layer and a light absorbing layer provided on the light reflecting layer; and a substrate provided on one surface of the color expression layer.

A β-type sialon phosphor represented by the following expression 1, in which D50 is 10 μm or less, and values of D10, D50, and D90 satisfy a relationship of the following expression 2 with respect to D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to a laser diffraction/scattering method. Expression 1: Si.sub.12-aAl.sub.aO.sub.bN.sub.16-b:Eu.sub.x (wherein 0<a≤3; 0<b≤3; 0<x≤0.1), expression 2: (D90−D10)/D50<1.6 (wherein the D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to the laser diffraction/scattering method.