Provided are a quantum dot, a method of preparing the quantum dot, an optical member including the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including indium (In), A.sup.1, and A.sup.2; and a shell covering the core. A.sup.1 is a Group V element, A.sup.2 is a Group III element other than indium, and the core includes a first region, and a second region covering the first region. The first region does not include A.sup.2, and includes indium and A.sup.1, and the second region includes indium, A.sup.1, and A.sup.2, and indium and A.sup.2 are alloyed with each other in the second region.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

Various embodiments may include a battery electrode, comprising: an iron electrode body comprising iron active material and a zinc sulfide additive, wherein the zinc sulfide additive comprises crystalline cubic zinc sulfide. Various embodiments may include a battery electrode, comprising: an iron electrode body comprising iron active material and a manganese sulfide additive, wherein the manganese sulfide additive comprises crystalline cubic manganese sulfide. Various embodiments may include an iron electrode battery, comprising: an iron electrode; and a sulfide reservoir separate from the iron electrode, the sulfide reservoir comprising crystalline cubic zinc sulfide. Various embodiments may include an iron electrode battery, comprising: an iron electrode and a sulfide reservoir separate from the iron electrode, the sulfide reservoir comprising crystalline cubic manganese sulfide.

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

A quantum dot-containing complex that may be used in a light emitting device, an optical member or devices including same includes: a quantum dot; and at least one ligand coordinated to the surface of the quantum dot and being a monomer represented by Formula 1, as defined herein.

A quantum dot-containing complex that may be used in a light emitting device, an optical member or devices including same includes: a quantum dot; and at least one ligand coordinated to the surface of the quantum dot and being a monomer represented by Formula 1, as defined herein.

Provided are a core shell particle including a core which contains a Group III element and a Group V element, and a shell which covers at least a part of a surface of the core and contains a Group II element and a Group VI element, in which the core shell particle has a tetrahedral shape having one side with a length of 6 nm or greater; a method of producing the core shell particle; and a film formed of the core shell particle.

Provided are a core shell particle including a core which contains a Group III element and a Group V element, and a shell which covers at least a part of a surface of the core and contains a Group II element and a Group VI element, in which the core shell particle has a tetrahedral shape having one side with a length of 6 nm or greater; a method of producing the core shell particle; and a film formed of the core shell particle.