Provided are a porous structure and a method of fabricating the same. The porous structure may include an aluminum oxide containing at least one of fluorine and phenyl group. For example, the porous structure may be formed from alumina which contains fluorine or phenyl group. The method of fabricating the porous structure may include preparing an aluminum precursor including at least one of fluorine and phenyl group; providing a precursor solution by mixing the precursor with a solvent; and forming the porous structure having 3-dimensional network structure including the aluminum oxide containing the at least one of fluorine and phenyl group from the precursor solution through gelation.

An insulated structure includes a plurality of walls and a cavity defined by the plurality of walls. A core material is disposed within the cavity. The core material includes particles with a diameter that is in a range of 80-1600 μm. The core material disposed within the cavity can have a density in a range of greater than 350 kg/m.sup.3 to 600 kg/m.sup.3. Methods of manufacturing the insulated structure also disclosed.

There is provided a thermoelectric conversion material containing Cu and Se as main components, an element M including one or two or more elements selected from Group 10 elements and Group 11 elements excluding Cu, and optional element of Te. The thermoelectric conversion material is represented by the following chemical formula. Chemical Formula: Cu.sub.xSe.sub.(1−y)Te.sub.yM.sub.z,

1.95≤x<2.05,0≤y≤0.1,0.002≤z≤0.03.

The present invention relates to a preparation method of a stretchable inorganic thermoelectric thin film and the stretchable inorganic thermoelectric thin film prepared by the method.

There is disclosed a functional lamellar particle including an unconverted portion of the lamellar particle, wherein the unconverted portion includes a first metal, a converted portion of the lamellar particle disposed external to a surface of the unconverted portion, wherein the converted portion includes a chemical compound of the first metal; and a functional coating disposed external to a surface of the converted portion.

Nanowire synthesis and one dimensional nanowire synthesis of titanates and cobaltates. Exemplary titanates and cobaltates that are fabricated and discussed include, without limitation, strontium titanate (SrTiO.sub.3), barium titanate (BaTiO.sub.3), lead titanate (PbTiO.sub.3), calcium cobaltate (Ca.sub.3Co.sub.4O.sub.9) and sodium cobaltate (NaCo.sub.2O.sub.4).

Nontoxic Near infra-red Reflecting (NIR) inorganic pigments, characteristically blue and well suited for the coloration of a wide variety of substrates, for example, plastics and concrete building roofing material, etc., comprise mixed metal silicate having the general formula: La.sub.xSr.sub.1-xCu.sub.1-yLi.sub.ySi.sub.4O.sub.10, where x is equal to 0 to 0.5 and y is equal to 0 to 0.5. These silicates with tetragonal crystal structure are prepared by calcination method in air atmosphere.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Ba.sub.1-a-b-cSr.sub.bCa.sub.cK.sub.aMg.sub.2Bi.sub.2-dSb.sub.d. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a La.sub.2O.sub.3-type crystal structure.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

Particulate LMFP cathode materials having high manganese contents and small amounts of dopant metals are disclosed. These cathode materials are made by milling a mixture of precursor materials in a wet or dry milling process. Preferably, off-stoichiometric amounts of starting materials are used to make the cathode materials. Unlike other high manganese LMFP materials, these cathode materials provide high specific capacities, very good cycle life and high energies even at high discharge rates.