A cover lid for use with a semiconductor package is disclosed. First, a polyamide mask is applied to one surface of the lid plate. Next, the exposed areas of the surface, as well as the sides of the lid plate, are metallized. The polyamide mask can then be removed. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

A metal-ceramic substrate having at least one ceramic layer (2), which is provided on a first surface side (2a) with at least one first metallization (3) and on a second surface side (2b), opposite from the first surface side (2a), with a second metallization (4), wherein the first metallization (3) is formed by a film or layer of copper or a copper alloy and is connected to the first surface side (2a) of the ceramic layer (2) with the aid of a “direct copper bonding” process. The second metallization (4) is formed by a layer of aluminum or an aluminum alloy.

Provided are: an apparatus and a method for producing a (metal plate)-(ceramic board) laminated assembly, a bonding material and a metal plate during the bonding of the metal plate to the ceramic board through the bonding-material layer and an apparatus and a method for producing a power-module substrate. An apparatus for producing a (metal plate)-(ceramic board) laminated assembly by laminating a metal plate having a temporary bonding material formed thereon on a ceramic board having a bonding-material layer formed thereon, the apparatus being equipped with: a conveying device which conveys the metal plate onto the ceramic board to laminate the ceramic board and the metal plate on each other; and a heating device which is arranged in the middle of a passage of the conveyance of the metal plate by the conveying device and melts the temporary-bonding material on the metal plate.

The invention relates to a process for metallizing ferrite ceramics, which comprises the following steps: arrangement of a contact element composed of copper or a copper alloy on a surface of the ferrite ceramic, melting of the contact element at least in the region in which the contact element contacts the surface of the ferrite ceramic, and cooling of the contact element and the ferrite ceramic to below the melting point of copper or the copper alloy.

A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

One example includes a method for fabricating a compound material. The method includes providing a first discrete material layer having a first thickness dimension. The first discrete material layer includes a first material having a first magnetic susceptibility. The method also includes depositing a second discrete material layer having a second thickness dimension over the first discrete material layer. The second discrete material layer can include a second material having a second magnetic susceptibility. The relative first and second thickness dimensions can be selected to provide a desired magnetic susceptibility of the compound material.

A power semiconductor substrate comprising an insulating planar base, at least one conductor track and at least one contact area as part of the conductor track, wherein a layer of a metallic material is disposed on the contact area by means of pressure sintering. The associated method comprises the steps of: producing a power semiconductor substrate that includes a planar insulating base, conductor tracks and contact areas; arranging a pasty layer, composed of a metallic material and a solvent, on at least one contact area of the power semiconductor substrate; and applying pressure to the pasty layer.

A configuration for joining a ceramic layer has a thermal insulating material to a metallic layer. The configuration includes an interface layer made of metallic material located between the ceramic layer and the metallic layer, which includes a plurality of interlocking elements on one of its sides, facing the ceramic layer, the ceramic layer comprising a plurality of cavities aimed at connecting with the corresponding interlocking elements of the interface layer. The configuration also includes a brazing layer by means of which the interface layer is joint to the metallic layer. The invention also refers to a method for obtaining such a configuration.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.