The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-ER.sup.3R.sup.4 (I) or R.sup.5E(ER.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminationscompared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

The present invention relates to a ligand compound, a catalyst system for olefin oligomerization and a method for oligomerizing an olefin using same. The catalyst system for olefin oligomerization according to the present invention exhibits high selectivity to 1-hexene or 1-octene while having excellent catalytic activity, thus enabling more efficient preparation of alpha-olefins.

Described herein is a preparation process of a flame retardant composition made from brominated bismuth and/or antimony compounds complexed with melamine, in which melamine, at least one between the bismuth carbonate and antimony sesquioxide, hydrobromic acid in aqueous solution are placed in contact with each other so as to trigger chemical reactions which lead to the formation of a complex of brominated bismuth or brominated antimony with melamine and melamine bromohydrate. The reagents are placed in contact in the presence of at least one reaction carrier defined by at least one compound chosen from the group consisting of melamine, melamine phosphate, melamine polyphosphate, ammonium phosphate, ammonium polyphosphate, triphenyl-phosphate, graphite, silica, lignin, coke and compounds containing triazine rings condensed or linked by NH groups. The reaction carrier is not involved in the reactions. There are no polymeric compounds in quantities such as to create a polymer matrix. The reagents being introduced into the reactor in an amount defined by the stoichiometric ratios of said reactions. The reaction carrier is introduced into the reactor in an amount defined with respect to the total weight of the reagents so that it can perform a modulator function.

The present invention relates to a ligand compound, a catalyst system for olefin oligomerization, and a method for oligomerizing olefins using the same. The ligand compound according to the present invention has a structure in which a substituent is substituted in the trans form, and thereby when used for olefin oligomerization, the activity of the catalyst used and the selectivity of 1-hexene and 1-octene can be increased.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Organometallic photoresists suitable for use in deep ultraviolet (DUV) or extreme ultraviolet (EUV) lithography are provided. The organometallic photoresists contain an organometallic molecule having least a metal element M selected from the group consisting of Bi, Sb, and mixtures thereof, and having an oxidation state of 3+, and at least one polymerizable group R. A method of forming a patterned materials feature on a substrate utilizing the organometallic photoresist compositions is also provided.

The present invention relates to a ligand compound, catalyst system for olefin oligomerization, and a method for oligomerizing olefins using the same. The catalyst system for olefin oligomerization according to the present invention exhibit selectivity to 1-hexene or 1-octene while having excellent catalytic activity, thus enabling more efficient preparation of alpha-olefins.

Provided is a polymerizable composition including an alkyne compound represented by the following general formula (1):

##STR00001## wherein, in general formula (1), X.sup.1 and X.sup.2 represent a sulfur atom, an oxygen atom, or an NH group and may be the same or different from each other, Q represents an alkylene group having 1 or 2 carbon atoms, a carbonyl group, or a thiophenylene group in which one of carbon atoms is substituted by an antimony atom, R.sup.1 and R.sup.2 represent an alkylene group having 1 or 2 carbon atoms and may be the same or different from each other, and m and n each represent 0 or 1.