The present invention relates to a novel metal complex, a method for producing same, and a method for producing a gamma-lactam compound using same, and the metal complex according to the present invention is used as a catalyst for producing a gamma-lactam compound and can efficiently produce a gamma-lactam compound with an excellent yield and excellent selectivity.

An object of a first aspect of the present invention is to provide a radical generating catalyst that can generate (produce) radicals under mild conditions. In order to achieve the above object, a first radical generating catalyst according to the first aspect of the present invention is characterized in that it includes ammonium and/or a salt thereof. A second radical generating catalyst according to the first aspect of the present invention is characterized in that it includes an organic compound having Lewis acidic properties and/or Brønsted acidic properties.

An object of a first aspect of the present invention is to provide a radical generating catalyst that can generate (produce) radicals under mild conditions. In order to achieve the above object, a first radical generating catalyst according to the first aspect of the present invention is characterized in that it includes ammonium and/or a salt thereof. A second radical generating catalyst according to the first aspect of the present invention is characterized in that it includes an organic compound having Lewis acidic properties and/or Brønsted acidic properties.

Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: ##STR00001##
where R.sub.1 and R.sub.4 are selected from the group consisting of C4-C10 alkyl groups; and R.sub.2 and R.sub.3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R.sub.2 and R.sub.3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

Mixed metal metal-organic frameworks (MM-MOFs) of copper-1,3,5-benzenetricarboxylate (BTC), M—Cu-BTC, wherein M is Zn(II), Ni(II), Co(II), and/or Fe(II) may be made using post-synthetic exchange (PSE) with metal ions. Such MM-MOFs may be used in H.sub.2 storage, especially Ni(II) and Co(II) MM-MOFs. Selected metal exchanged materials can provide gravimetric H.sub.2 uptake around 1.63 wt. % for Zn—Cu-BTC, around 1.61 wt. % for Ni—Cu-BTC, around 1.63 wt. % for Fe—Cu-BTC, and around 1.12 wt. % for Co—Cu-BTC.

Mixed metal metal-organic frameworks (MM-MOFs) of copper-1,3,5-benzenetricarboxylate (BTC), M—Cu-BTC, wherein M is Zn(II), Ni(II), Co(II), and/or Fe(II) may be made using post-synthetic exchange (PSE) with metal ions. Such MM-MOFs may be used in H.sub.2 storage, especially Ni(II) and Co(II) MM-MOFs. Selected metal exchanged materials can provide gravimetric H.sub.2 uptake around 1.63 wt. % for Zn—Cu-BTC, around 1.61 wt. % for Ni—Cu-BTC, around 1.63 wt. % for Fe—Cu-BTC, and around 1.12 wt. % for Co—Cu-BTC.

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

##STR00001##

An object of the present invention is to provide a further more effective process for preparing a certain optically active compound including an optically active 1-acetyl-2,2,4-trimethyl-1,2,3,4-tetrahydroquinoline.

The present invention provides a process for an optically active compound represented by formula (3) (wherein R.sup.5 represents a hydrogen atom etc., R.sup.6 and R.sup.7 each independently represents a hydrogen atom, etc., R.sup.8 represents a C1-C6 alkyl group, and R.sup.9, R.sup.10 and R.sup.11 each independently represents a hydrogen atom, etc. The carbon atom with a symbol of the asterisked “*” represents an asymmetric carbon atom),

which comprises a reacting a compound represented by formula (2) (wherein R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, and R.sup.11 has the same meanings as the above) with hydrogen in the presence of asymmetric cobalt complex.

##STR00001##

The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.

Provided is an ionic solid having pores for incorporating a substance therein.