A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.

A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.

A silver brazing material containing silver, copper, zinc, manganese, nickel, and tin as indispensable constituent elements. The silver brazing material includes 35 mass % or more and 45 mass % or less silver, 18 mass % or more and 28 mass % or less zinc, 2 mass % or more and 6 mass % or less manganese, 1.5 mass % or more and 6 mass % or less nickel, and 0.5 mass % or more and 5 mass % or less tin, with the balance being copper impurities. Within these compositional ranges, a predetermined relation is set between the manganese content and the nickel content, whereby the silver brazing material can be provided with excellent characteristics also in terms of processability or wettability. In the silver brazing material of the present invention, the silver content is reduced, and also melting point reduction and the narrowing of the temperature difference between solidus temperature and liquidus temperature are attempted.

According to one embodiment, a ceramic copper circuit board a ceramic substrate, a copper circuit board provided at one surface of the ceramic substrate. A ratio of a thickness of the copper circuit board to a thickness of the ceramic substrate is 1.25 or more. A number of grain boundaries is not less than 5 and not more than 250 along every 10-mm straight line drawn in a front surface of the copper circuit board.

According to one embodiment, a ceramic copper circuit board a ceramic substrate, a copper circuit board provided at one surface of the ceramic substrate. A ratio of a thickness of the copper circuit board to a thickness of the ceramic substrate is 1.25 or more. A number of grain boundaries is not less than 5 and not more than 250 along every 10-mm straight line drawn in a front surface of the copper circuit board.

A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

Disclosed is an acid-resistant alloy catalyst comprising nickel, one or more rare earth elements, stannum and aluminum. The acid-resistant alloy catalyst is low-cost and stable, and does not need a carrier, and can be stably used in continuous industrial production, thus achieving a low production cost.

The present invention provides a sintered metal friction material that has excellent wear resistance, heat resistance even at high load and has a higher friction coefficient while maintaining a friction coefficient and wear resistance that are hard to decrease, and has a reduced content of copper of less than 5 mass %. There is provided a sintered metal friction material characterized in that the sintered metal friction material comprises a sintered material of a friction material composition, the friction material composition comprises matrix metals and a friction modifier, the matrix metals comprise following 20 to 40 mass % of iron powder, 20 to 40 mass % of nickel powder, 0.5 to 10 mass % of zinc powder, 0.5 to 5 mass, of tin powder, 0.5 to 4 mass % of copper powder and 0.5 to 5 mass % of sintering assist powder.

A titanium-based alloy composition consisting in weight percent, of: between 15.0 and 35.0% niobium, between 0.0 and 7.5% molybdenum, between 0.0 and 20.0% tantalum, between 0 and 7.0% zirconium, between 0 and 6.0% tin, between 0.0 and 2.0% hafnium, between 0.0 and 0.5 % aluminium, between 0.0 and 0.5% vanadium, between 0.0 and 0.5% iron, between 0.0 and 0.5% chromium, between 0.0 and 0.5% cobalt, between 0.0 and 0.5% nickel, between 0.0 and 1.0% silicon, between 0.0 and 0.2% boron, between 0.0 and 0.5% calcium, between 0.0 and 0.5% carbon, between 0.0 and 0.5% manganese, between 0.0 and 0.5% gold, between 0.0 and 0.5% silver, between 0.0 and 0.5% oxygen, between 0.0 and 0.5% hydrogen, between 0.0 and 0.5% nitrogen, between 0.0 and 0.5% palladium, between 0.0 and 0.5% lanthanum, the balance being titanium and incidental impurities, wherein the composition satisfies the following equation: 0.0175Nb+0.0183Mo+0.03Ta+0.0116Zr+0.1Sn>1.0 where Nb, Mo, Ta, Zr and Sn represent the amounts of niobium, molybdenum, tantalum, zirconium and tin in wt % respectively.