An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiO.sub.3 layer, a La.sub.0.67Sr.sub.0.33MnO.sub.3 layer, and a (BaTiO.sub.3).sub.0.5—(CeO.sub.2).sub.0.5 layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO.sub.3, a second layer of La.sub.0.67Sr.sub.0.33MnO.sub.3, and a third layer of (BaTiO.sub.3).sub.0.5—(CeO.sub.2).sub.0.5 (in which an atomic ratio of BaTiO.sub.3 to CeO.sub.2 is 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiO.sub.3 can reach 40 nm.

Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.

The present invention provides a method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, in which A represents an organic cation or a mixture of two or more different cations, at least one of which is an organic cation, M represents a divalent metal cation or a mixture of two or more different divalent metal cations, and X represents halide anions which are the same or different, the method comprising the steps of: (i) forming a first layer on the surface of a substrate, the first layer comprising an organic-inorganic metal halide perovskite material having a planar, layered two-dimensional crystal structure (ii) reacting the first layer with one or more organic halides to form the crystalline or polycrystalline layer comprising an organic-inorganic metal halide perovskite material having the formula AMX.sub.3. Also provided is an optoelectronic or photovoltaic device including an active layer comprising an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, wherein the material is obtainable using the above defined method.

A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.

Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, and methods for fabricating the same. In one implementation, a method of forming a separator for a battery is provided. The method comprises exposing a metallic material to be deposited on a surface of an electrode structure positioned in a processing region to an evaporation process. The method further comprises flowing a reactive gas into the processing region. The method further comprises reacting the reactive gas and the evaporated metallic material to deposit a ceramic separator layer on the surface of the electrode structure.

A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.

The invention refers to negative electrode plate, preparation method thereof and electrochemical device. The negative electrode plate comprises: a negative current collector, a negative active material layer, and an inorganic dielectric layer which are provided in a stacked manner; the negative active material layer comprises opposite first surface and second surface, wherein the first surface is disposed away from the negative current collector; the inorganic dielectric layer is disposed on the first surface of the negative active material layer and consists of an inorganic dielectric material. The negative electrode plate provided by the application is useful in an electrochemical device, and can result in an electrochemical device having simultaneously excellent safety performance and cycle performance.

A coating includes a first base layer including a nitride of at least Al and Cr, a second base layer including a nitride of at least Al and Cr overlying the first base layer, and an outermost indicator layer overlying the second base layer. The first base layer has a positive residual compressive stress gradient. The second base layer has substantially constant residual compressive stresses. The outermost indicator layer includes a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr. The outermost indicator layer has residual compressive stresses that are less than the residual compressive stresses of the second base layer.

Provided is a cutting tool that can have a long tool life even when used to cut soft metals in particular. The cutting tool comprises a base body and a hard carbon film arranged on the base body, the hard carbon film includes an amorphous phase and a graphite phase, the density of the hard carbon film is no less than 2.5 g/cm.sup.3 and no more than 3.5 g/cm.sup.3, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the average coordination number of the amorphous phase is no less than 2.5 and no more than 4.