A thin film deposition apparatus comprising: a laser pulse generator to generate a laser pulse; optical elements to optionally P-polarize and optionally rotate the laser pulse polarization with a polarization angle φ based on the cavity chamber and deposition material; focusing optics to focus the laser pulse; a source of deposition material having refractive index n.sub.2; said deposition material mounted within an evacuated chamber having a refractive index n.sub.1; a rotation and / or translation device to alter and / or direct said laser pulse onto said source of deposition material at an incidence angle θ to produce a plasma to be deposited on a substrate; wherein the polarization angle φ and incidence angle θ are defined by the area under the graphical representation of the ellipse of equation

[00001]$\frac{{\left(\theta -{\theta }_0\right)}^2}{a^2}+\frac{{\left(\phi -{\phi }_0\right)}^2}{b^2}=1$

where θ.sub.0=0.8× arctan (n.sub.2/n.sub.1), φ.sub.0=0, a=0.4× arctan (n.sub.2/n.sub.1) and b=0.5× arctan (n.sub.2/n.sub.1).

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.

A method for treating a jewel of the monocrystalline or polycrystalline type (20), in particular for the watchmaking industry, the jewel (20) including a body (23) defining the shape thereof. The method includes a step of ion implantation on the surface (24) of at least a part of the body (23) to modify the roughness of the surface (24).

A film forming apparatus has a process chamber and a processing unit provided in the process chamber and forming adhesive film. The surface of the inner walls of the process chamber is formed of a material having a large getter effect on gas or water (H.sub.2O) remaining in the process chamber.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

A coated cutting tool includes a substrate with a coating including a (Ti,Al)N layer having an overall composition (Ti.sub.xAl.sub.1-x)N, 0.34≤x≤0.65. The (Ti,Al)N layer contains columnar (Ti,Al)N grains with an average grain size of from 10 to 100 nm. The (Ti,Al)N layer also includes lattice planes of a cubic crystal structure. The (Ti,Al)N layer shows a pattern in electron diffraction analysis, wherein there is a diffraction signal existing, which is shown as a peak (P) in an averaged radial intensity distribution profile having its maximum within a scattering vector range of from 3.2 to 4.0 nm.sup.−1, the full width half maximum (FWHM) of the peak (P) being from 0.8 to 2.0 nm.sup.−1.

Provided is a coated cutting tool in which a surface of a substrate is coated with a hard coating film. The hard coating film includes: a layer (A) disposed on the surface of the substrate, and having a face-centered cubic lattice structure, in which the total content ratio of W and Ti is at least 85 atomic %, and which contains W as the most abundant element and Ti as the next most abundant element among metal (including metalloid) elements; and a layer (B) disposed on the layer (A) and having a face-centered cubic lattice structure, which is composed of nitrides or carbonitrides containing Al, Cr, and Si, and in which, among metal (including metalloid) elements, the Al content ratio is at least 50 atomic %, the total content ratio of Al and Cr is at least 85 atomic %, and the Si content ratio is 4 to 15 atomic %.

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

A coated cutting tool includes a substrate and a coating layer formed on the substrate, wherein the coating layer comprises a compound layer containing a compound having a composition represented by (Al.sub.xCr.sub.yTi.sub.1−x−y)N (in the formula (1), x represents an atomic ratio of an Al element to a total of the Al element, a Cr element and a Ti element and satisfies 0.70≤x≤0.95, and y represents an atomic ratio of a Cr element to a total of an Al element, the Cr element and a Ti element and satisfies 0.04≤y≤0.21, and 1−x−y>0); a ratio (Cr/Ti) of the Cr element and the Ti element in the compound layer is 1.0 or more and 2.5 or less; and an average thickness of the compound layer is 2.0 μm or more and 10.0 μm or less.