Provided is a method for producing a photocatalyst electrode for water decomposition that exhibits excellent detachability between the substrate and the photocatalyst layer and exhibits high photocurrent density. The method for producing a photocatalyst electrode for water decomposition of the invention includes: a metal layer forming step of forming a metal layer on one surface of a first substrate by a vapor phase film-forming method or a liquid phase film-forming method; a photocatalyst layer forming step of forming a photocatalyst layer by subjecting the metal layer to at least one treatment selected from an oxidation treatment, a nitriding treatment, a sulfurization treatment, or a selenization treatment; a current collecting layer forming step of forming a current collecting layer on a surface of the photocatalyst layer, the surface being on the opposite side of the first substrate; and a detachment step of detaching the first substrate from the photocatalyst layer.

An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×10.sup.21/cm.sup.3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH.sub.4HF.sub.2) of 7.13% and an ammonium fluoride (NH.sub.4F) of 15.4%.

A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.

A method for depositing a coating on a substrate (100), including successively depositing a thin intermetallic layer (110) on the substrate (100), so as to obtain an external part (10), and annealing the external part (10) in a dedicated enclosure.

The present invention relates to a flexible substrate and a method of manufacturing same and, more particularly, to a flexible substrate and a method of manufacturing same, the flexible substrate having high flexibility, high transparency, and high conductivity, so as to be able to improve the quality of a flexible display device to which it is applied. To this end, the present invention provides a flexible substrate and a method of manufacturing same, the flexible substrate characterized by comprising: a flexible base material; an ITO thin film formed on the flexible base material; and a plurality of nano particles discontinuously distributed within the ITO thin film.

A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 μm or less, the Nd content satisfies the conditional expression of 0.15≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 μm to 115 μm (but excluding 70 μm), the Nd content satisfies the conditional expression of 0.18≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 μm to 160 μm (but excluding 115 μm), the Nd content satisfies the conditional expression of 0.20≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 μm and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 μm or less, the Nd content satisfies the conditional expression of 0.15≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 μm to 115 μm (but excluding 70 μm), the Nd content satisfies the conditional expression of 0.18≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 μm to 160 μm (but excluding 115 μm), the Nd content satisfies the conditional expression of 0.20≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 μm and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

A precious metallic laminate may include a first transparent substrate, a transparent transition layer deposited on the first transparent substrate, and a metallic layer deposited on the transparent transition layer. The metallic layer may include a precious metal. The laminate may include a second transparent substrate covering the metallic layer.

Aluminum-boron nitride nanotube composites and methods of making thereof are disclosed herein. In at least one specific embodiment, the method can include: at least partially coating boron nitride nanotubes with aluminum to make an aluminum-boron nitride nanotube layered structure, where the at least partially coating is performed by sputter deposition, and where the boron nitride nanotubes have a length of about 100 μm to about 300 μm; sintering the aluminum-boron nitride nanotube layered structure to make an aluminum-boron nitride nanotube pellet, where the sintering is performed by spark plasma sintering; and rolling the aluminum-boron nitride nanotube pellet to make the aluminum-boron nitride nanotube composite.

A tool for depositing multilayer coatings onto a substrate. The tool includes a housing defining a vacuum chamber connected to a vacuum source, deposition stations each configured to deposit a layer of multilayer coating on the substrate, a curing station, and a contamination reduction device. At least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. In one tool configuration, the substrate may travel back and forth through the tool as many times as needed to achieve the desired number of layers of multilayer coating. In another, the tool may include numerous housings adjacently spaced such that the substrate may make a single unidirectional pass. The contamination reduction device may be configured as one or more migration control chambers about at least one of the deposition stations, and further includes cooling devices, such as chillers, to reduce the presence of vaporous layer precursors. The tool is particularly well-suited to depositing multilayer coatings onto flexible substrates, as well as to encapsulating environmentally-sensitive devices placed on the flexible substrate.