A decorative component includes a plurality of metal finish layers deposited over a substrate and a plurality of sub-layers. The outermost metal finish layer is selectively deposited or removed to define one or more recesses to create different appearances of the component. The outer metal layer may undergo laser ablation to remove at least a portion of the outer layer while still exposing the outer layer in the area of removed material. The recess may extend fully through the outer layer to expose the underlying metal finish layer, and/or the recess may have a sloped bottom surface to define a gradient appearance. The outer layer may be applied over a mask that is applied to the underlying layer, such that the outer layer is selectively applied. The outer layer may be removed to expose the underlying finish layer without exposing a nickel sublayer and without requiring a top coat.

A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

Embodiments of methods of filling features with molybdenum (Mo) include depositing a first layer of Mo in a feature including an opening and an interior and non-conformally treating the first layer such that regions near the opening preferentially treated over regions in the interior. In some embodiments, a second Mo layer is deposited on the treated first layer. Embodiments of methods of filling features with Mo include controlling Mo precursor flux to transition between conformal and non-conformal fill.

Embodiments of methods of filling features with molybdenum (Mo) include depositing a first layer of Mo in a feature including an opening and an interior and non-conformally treating the first layer such that regions near the opening preferentially treated over regions in the interior. In some embodiments, a second Mo layer is deposited on the treated first layer. Embodiments of methods of filling features with Mo include controlling Mo precursor flux to transition between conformal and non-conformal fill.

Disclosed is a method for forming a metal-containing film on a substrate comprises the steps of: exposing the substrate to a vapor of a film forming composition that contains a metal-containing precursor; and depositing at least part of the metal-containing precursor onto the substrate to form the metal-containing film on the substrate through a vapor deposition process, wherein the metal-containing precursor is a pure M(alkyl-arene).sub.2, wherein M is Cr, Mo, or W; arene is

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 each is independently selected from H, C.sub.1-C.sub.6 alkyl, C.sub.1-C.sub.6 alkenyl, C.sub.1-C.sub.6 alkylphenyl, C.sub.1-C.sub.6 alkenylphenyl, or —SiXR.sup.7R.sup.8, wherein X is selected from F, Cl, Br, I, and R.sup.7, R.sup.8 each are selected from H, C.sub.1-C.sub.6 alkyl, C.sub.1-C.sub.6 alkenyl.

Disclosed is a method for forming a metal-containing film on a substrate comprises the steps of: exposing the substrate to a vapor of a film forming composition that contains a metal-containing precursor; and depositing at least part of the metal-containing precursor onto the substrate to form the metal-containing film on the substrate through a vapor deposition process, wherein the metal-containing precursor is a pure M(alkyl-arene).sub.2, wherein M is Cr, Mo, or W; arene is

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 each is independently selected from H, C.sub.1-C.sub.6 alkyl, C.sub.1-C.sub.6 alkenyl, C.sub.1-C.sub.6 alkylphenyl, C.sub.1-C.sub.6 alkenylphenyl, or —SiXR.sup.7R.sup.8, wherein X is selected from F, Cl, Br, I, and R.sup.7, R.sup.8 each are selected from H, C.sub.1-C.sub.6 alkyl, C.sub.1-C.sub.6 alkenyl.

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R′ are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group. ##STR00001##