C23C16/06

Method of forming a thin film using a surface protection material

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Method of forming a thin film using a surface protection material

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Thin film laminate, thin film device and multilayer substrate

A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

Thin film laminate, thin film device and multilayer substrate

A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

Methods of Determining Process Recipes and Forming a Semiconductor Device

In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.

Steel sheet having excellent image clarity after painting

Provided is a steel sheet having excellent image clarity after painting, including: carbon (C): 0.001% to 0.03%, silicon (Si): 0.001% to 0.35%, manganese (Mn): 0.05% to 2.2%, phosphorus (P): 0.003% to 0.1%, sulfur (S): 0.001% or 0.025%, aluminum (Al): 0.01% to 0.1%, nitrogen (N): 0.001% to 0.007%, and a remainder of iron (Fe) and inevitable impurities. The microstructure of the steel sheet mainly is ferrite phases. An R-cube texture of a surface layer of the steel sheet is 5% or less by area %.

Steel sheet having excellent image clarity after painting

Provided is a steel sheet having excellent image clarity after painting, including: carbon (C): 0.001% to 0.03%, silicon (Si): 0.001% to 0.35%, manganese (Mn): 0.05% to 2.2%, phosphorus (P): 0.003% to 0.1%, sulfur (S): 0.001% or 0.025%, aluminum (Al): 0.01% to 0.1%, nitrogen (N): 0.001% to 0.007%, and a remainder of iron (Fe) and inevitable impurities. The microstructure of the steel sheet mainly is ferrite phases. An R-cube texture of a surface layer of the steel sheet is 5% or less by area %.

Method for producing a metal decoration on a dial and dial obtained according to this method

A method for producing metal decorations on a curved dial made of insulating material includes forming, by a method of the LIGA-UV type, a mould made of photosensitive resin and of galvanically depositing a layer of at least one metal from the conductive layer in order to form a block substantially reaching the upper surface of the photosensitive resin.

Method for producing a metal decoration on a dial and dial obtained according to this method

A method for producing metal decorations on a curved dial made of insulating material includes forming, by a method of the LIGA-UV type, a mould made of photosensitive resin and of galvanically depositing a layer of at least one metal from the conductive layer in order to form a block substantially reaching the upper surface of the photosensitive resin.

Vapor deposition of thin films comprising gold

Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.