A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 μm. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.

This invention teaches a new class of materials that can be used to manufacture hairsprings and/or other components of mechanical watches, and methods for manufacturing these components. The new class of materials is crystalline compounds, including, but not limited to, gallium arsenide, extrinsically doped gallium arsenide, extrinsically doped silicon, gallium nitride, extrinsically doped gallium nitride, gallium phosphide, extrinsically doped gallium phosphide, and quartz. This invention also teaches laminated/coated crystalline compounds. The lamination/coating may be applied by one of the following methods, including but not limited to: plasma enhanced chemical vapor deposition, atomic layer deposition, sputtering, electron beam evaporation, and thermal evaporation. Using crystalline compounds, in particular extrinsically doping the crystalline compounds, affords the possibility to controllably alter the mechanical, electrical, thermal, magnetic, and/or other properties of the watch components. These properties can be further altered by applying single or multiple laminates/coatings of varying thicknesses and/or geometries.

This invention teaches a new class of materials that can be used to manufacture hairsprings and/or other components of mechanical watches, and methods for manufacturing these components. The new class of materials is crystalline compounds, including, but not limited to, gallium arsenide, extrinsically doped gallium arsenide, extrinsically doped silicon, gallium nitride, extrinsically doped gallium nitride, gallium phosphide, extrinsically doped gallium phosphide, and quartz. This invention also teaches laminated/coated crystalline compounds. The lamination/coating may be applied by one of the following methods, including but not limited to: plasma enhanced chemical vapor deposition, atomic layer deposition, sputtering, electron beam evaporation, and thermal evaporation. Using crystalline compounds, in particular extrinsically doping the crystalline compounds, affords the possibility to controllably alter the mechanical, electrical, thermal, magnetic, and/or other properties of the watch components. These properties can be further altered by applying single or multiple laminates/coatings of varying thicknesses and/or geometries.

A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.

System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).

System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al.sub.2O.sub.3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO.sub.2).

A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E′R.sup.3R.sup.4 (I) or R.sup.5E(E′R.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.