A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

A soldered product comprising a first component soldered to a second component is provided. The first component comprises a stainless steel substrate, an adhesion promoter layer made of nickel deposited on at least one joining surface of the stainless steel substrate; and a tin layer deposited on the adhesion promoter layer. The tin layer has a layer thickness in the range of 10-30 μm. The second component is typically a rare earth magnet.

Even when a stress is applied due to energization or switching operation, a connection state of electrode layers can be appropriately maintained. A semiconductor device includes a semiconductor layer of first conductivity type, an upper surface structure formed on a surface layer of the semiconductor layer, and an upper surface electrode formed over the upper surface structure. The upper surface electrode includes a first electrode formed on an upper surface of the semiconductor layer, and a second electrode formed over an upper surface of the first electrode. The first concave portion is formed on the upper surface of the first electrode. A side surface of the first concave portion has a tapered shape. The second electrode is formed over the upper surface of the first electrode including an inside of the first concave portion.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

A method of applying a protective coating with improved adhesion on an aluminum alloy component includes first pretreating the surface of a component by depositing a sacrificial protective immersion layer using a zincating or similar process. Portions of the protective immersion layer as well as portions of the underlying aluminum alloy substrate are then electrolytically etched off in an ionic liquid. A protective aluminum coating is then electrodeposited on the component in an ionic liquid.

A method of applying a protective coating with improved adhesion on an aluminum alloy component includes first pretreating the surface of a component by depositing a sacrificial protective immersion layer using a zincating or similar process. Portions of the protective immersion layer as well as portions of the underlying aluminum alloy substrate are then electrolytically etched off in an ionic liquid. A protective aluminum coating is then electrodeposited on the component in an ionic liquid.

A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.

A semiconductor device is provided, including four flat surfaces on four sides, and two sides include a full lead end height with electroless plating, and the other two sides comprise un-plated exposed Cu tie bar. The full lead end height with electroless plating is an ENIG plating or an ENEPIG plating.

A semiconductor device is provided, including four flat surfaces on four sides, and two sides include a full lead end height with electroless plating, and the other two sides comprise un-plated exposed Cu tie bar. The full lead end height with electroless plating is an ENIG plating or an ENEPIG plating.

A method for plating a stainless steel substrate is provided. According to one embodiment, the method comprises sandblasting at least one joint surface of a stainless steel substrate and treating the joint surface of the stainless steel substrate with an aqueous solution (acid bath) which contains sulfuric acid, nitric acid and hydrofluoric acid. The stainless steel substrate is then rinsed with hydrochloric acid. The method further includes galvanic deposition of a nickel plating on the joining surface of the stainless steel substrate and the subsequent deposition of a tin layer on the nickel-coated joining surface of the stainless steel substrate.