Provided are a deposition mask having a plurality of fine through-holes formed on a metal foil; a metal foil to be used therein; manufacturing methods therefor; and an organic EL device manufacturing method using the deposition mask, and an FeNi alloy metal foil to be used as a deposition mask, including 34-46 wt % of Ni and the balance of Fe and inevitable impurities. The metal foil includes a pattern formation area and an uncoated area on at least one surface thereof, the pattern formation area is thinner than the uncoated area and has low surface roughness, and the uncoated area is positioned at the edge of the metal foil so as to surround the pattern formation area.

Provided are a deposition mask having a plurality of fine through-holes formed on a metal foil; a metal foil to be used therein; manufacturing methods therefor; and an organic EL device manufacturing method using the deposition mask, and an FeNi alloy metal foil to be used as a deposition mask, including 34-46 wt % of Ni and the balance of Fe and inevitable impurities. The metal foil includes a pattern formation area and an uncoated area on at least one surface thereof, the pattern formation area is thinner than the uncoated area and has low surface roughness, and the uncoated area is positioned at the edge of the metal foil so as to surround the pattern formation area.

A mask has a mask pattern region and a non-mask pattern region located at a peripheral of the mask pattern region. The mask pattern region includes at least one effective mask region. In any effective mask region, the mask includes a plurality of evaporation holes and at least one shielding; strip. Each shielding, strip is located between two adjacent evaporation holes. The mask has at least one welding region in the non-mask pattern region. A thickness of a portion of the mask in the non-mask pattern region and at least in the welding region is greater than a thickness of the shielding strip of the mask in the effective mask region, and the thickness refers to a dimension of the corresponding portion along a direction perpendicular to a plane where the mask is located.

A mask has a mask pattern region and a non-mask pattern region located at a peripheral of the mask pattern region. The mask pattern region includes at least one effective mask region. In any effective mask region, the mask includes a plurality of evaporation holes and at least one shielding; strip. Each shielding, strip is located between two adjacent evaporation holes. The mask has at least one welding region in the non-mask pattern region. A thickness of a portion of the mask in the non-mask pattern region and at least in the welding region is greater than a thickness of the shielding strip of the mask in the effective mask region, and the thickness refers to a dimension of the corresponding portion along a direction perpendicular to a plane where the mask is located.

Provided are a mother plate, a method of manufacturing the mother plate, a method of manufacturing a mask, and a method of depositing organic light-emitting diode (OLED) pixels. A method of manufacturing a mother plate 20 used to electroform a mask, according to the present invention, includes (a) providing a substrate 21 made of conductive monocrystalline silicon, and (b) forming an insulator 25 having patterns, on at least one surface of the substrate 21.

Provided are a mother plate, a method of manufacturing the mother plate, a method of manufacturing a mask, and a method of depositing organic light-emitting diode (OLED) pixels. A method of manufacturing a mother plate 20 used to electroform a mask, according to the present invention, includes (a) providing a substrate 21 made of conductive monocrystalline silicon, and (b) forming an insulator 25 having patterns, on at least one surface of the substrate 21.

Provided are a method of producing a mesh filter, which is capable of forming more minute holes than by punching processing, and which makes it possible, by forming meshes of different openings on the same base material, to appropriately change a flow rate or a light amount with the various opening sizes, and a mesh filter.

The method of producing a mesh filter includes a step of producing a mesh filter by continuously plating a platable metal using a roll with a DLC pattern, wherein a mesh filter-shaped resist pattern is obtained by forming multiple mesh filter-shaped resist patterns of different openings on the same cylindrical metal base material.

Provided are a method of producing a mesh filter, which is capable of forming more minute holes than by punching processing, and which makes it possible, by forming meshes of different openings on the same base material, to appropriately change a flow rate or a light amount with the various opening sizes, and a mesh filter.

The method of producing a mesh filter includes a step of producing a mesh filter by continuously plating a platable metal using a roll with a DLC pattern, wherein a mesh filter-shaped resist pattern is obtained by forming multiple mesh filter-shaped resist patterns of different openings on the same cylindrical metal base material.

A method for manufacturing a mold according to the first aspect of the present invention includes the steps of: placing a base material of semiconductor or metal that reacts with sulfur hexafluoride in a reactive ion etching apparatus; supplying a mixed gas of sulfur hexafluoride and oxygen thereto; making the base material undergo a plasma dry-etching process such that oxides are scattered on a surface of the base material, etching advances on the surface of the base material while the oxides function as etching masks, and thereby a fine surface roughness is formed on the surface of the base material; and irradiating the fine surface roughness with an ion beam such that shapes of protrusions of the fine surface roughness can be adjusted.

A method for manufacturing a mold according to the first aspect of the present invention includes the steps of: placing a base material of semiconductor or metal that reacts with sulfur hexafluoride in a reactive ion etching apparatus; supplying a mixed gas of sulfur hexafluoride and oxygen thereto; making the base material undergo a plasma dry-etching process such that oxides are scattered on a surface of the base material, etching advances on the surface of the base material while the oxides function as etching masks, and thereby a fine surface roughness is formed on the surface of the base material; and irradiating the fine surface roughness with an ion beam such that shapes of protrusions of the fine surface roughness can be adjusted.