An object is to enhance the accuracy of porosity and/or the flexibility in adjustment of the porosity in each portion of a plate. There is provided a plate that is placed between a substrate and an anode in a plating tank. The plate comprises a pore forming area in which a plurality of pores are formed, wherein the pore forming area includes a center portion, a middle portion located on an outer side of the center portion, and an outer circumferential portion located on an outer side of the middle portion, the center portion and the outer circumferential portion of the pore forming area have a plurality of oblong pores, and the middle portion of the pore forming area has a plurality of circular pores.

An object is to enhance the accuracy of porosity and/or the flexibility in adjustment of the porosity in each portion of a plate. There is provided a plate that is placed between a substrate and an anode in a plating tank. The plate comprises a pore forming area in which a plurality of pores are formed, wherein the pore forming area includes a center portion, a middle portion located on an outer side of the center portion, and an outer circumferential portion located on an outer side of the middle portion, the center portion and the outer circumferential portion of the pore forming area have a plurality of oblong pores, and the middle portion of the pore forming area has a plurality of circular pores.

A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

An electrode of a chemical cell includes a substrate having a surface, an array of conductive projections supported by the substrate and extending outward from the surface of the substrate, each conductive projection of the array of conductive projections having a semiconductor composition for reduction of carbon dioxide (CO.sub.2) in the chemical cell, and a catalyst arrangement disposed along each conductive projection of the array of conductive projections, the catalyst arrangement including a copper-based catalyst and an iron-based catalyst for the reduction of carbon dioxide (CO.sub.2) in the chemical cell.

A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are arranged on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid holes have one end located between the plurality of anodes. A plurality of control devices is configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is arranged within a second predetermined gap of a work piece substrate including a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5:1 and 1.5:1. An array controller is configured to energize selected ones of the plurality of anodes using corresponding ones of the plurality of control devices while electrolyte solution is supplied through the first plurality of fluid holes between the anode substrate and the work piece substrate.

A method of detecting space debris includes: generating a virtual space debris in accordance with the law of conservation of mass by applying a debris breakup model to an object of breakup origin; calculating an orbit of each virtual space debris based on a debris orbit propagation model; and generating appearance frequency distribution of a motion vector of each virtual space debris on the celestial sphere based on the orbit calculation. The above operations are executed multiple times. The method further includes setting a search range vector based on a motion vector having a high level of the appearance frequency distribution of the motion vector, and applying a stacking method to regions in images captured at time intervals during the fixed point observation, the regions being shifted along the search range vector sequentially in the order of capture, thereby detecting space debris appearing on the images.

The present inventin relates to a process for depositing a metal layer on a substrate by contacting the substrate with a metal plating bath comprising a metal ion source and a suppressor, and applying a current density to the substrate, where the suppressor is a polycarboxylate ether as described below. The invention further relates to a metal plating bath comprising a metal ion source and the suppressor which is a polycarboxylate ether; and to a use of the polycarboxylate ether in a metal plating bath for depositing a metal layer on a substrate.

A method of making an electrical component includes transmitting electrical energy from a power source through one or more deposition anodes, through an electrolyte solution, and to an intralayer electrical-connection feature of a build plate, such that material is electrochemically deposited onto the intralayer electrical-connection feature and forms an interlayer electrical-connection feature. The method also includes securing a dielectric material so that the dielectric material contacts and electrically insulates the intralayer electrical-connection feature and contacts and at least partially electrically insulates the interlayer electrical-connection feature. The method additionally includes depositing a seed layer onto the dielectric material and the interlayer electrical-connection feature, electrochemically depositing material onto the seed layer, to form at least one second intralayer electrical-connection feature of the electrical component, and removing any one or more portions of the seed layer onto which no portion of the at least one second intralayer electrical-connection feature is formed.

Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.