A bicycle gear having a first coating layer obtained by a plasma electrolytic oxidation treatment and a second coating layer, overlapped on the first coating layer, that is a lubricating substance, preferably a fluoropolymer.

An electrode device is provided with a closed part facing a bottom part of a bottomed hole when inserted inside the bottomed hole, and a flow through hole linking the inside and outside of the electrode device is formed in the electrode device. When surface treatment is implemented on the inner wall surface of the bottomed hole, the hollow electrode device is inserted into the inside of the bottomed hole, the electrolytic treatment solution is made to flow through the space inside the bottomed hole, and power is applied across the electrode device and the inner wall surface of the bottomed hole. The closed part faces the bottom part of the bottomed hole as an electrode across a prescribed surface area; therefore, electroplating at the bottom part of the bottomed hole proceeds to the same extent as other sites.

A station for localized surface treatment of an industrial workpiece to be treated includes: at least one treatment chamber having a cell or two half-cells, each cell or half-cell delimiting a tight space between walls of the cell or half-cell and a respective portion or face of the industrial workpiece, the cell or each half-cell having a wall having an opening for covering a corresponding portion or face of the industrial workpiece, the opening of the cell or half-cell being delimited by a continuous sealing gasket, the cell or each half-cell including positioning means, the at least one treatment chamber having a supply and emptying circuit; and a plurality of storage vats each containing a treatment fluid, the supply and emptying circuit connecting each storage vat to the at least one treatment chamber so as to supply the at least one treatment chamber with respective treatment fluids.

Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.

A part-carrier for electrolytically treating geometrically complex parts includes a reinforcement vertically supporting supports that are movable in rotation and designed to carry the parts to be treated, and a control member which, when activated, pivots the movable supports in sequence to either side of a neutral initial position. Application to electroplating.

The invention relates to a system for applying a superimposed time-varying frequency electromagnetic wave to a target object or a target region that is formed by the target object and a medium surrounding the target object, comprising a device for generating a superimposed time-varying frequency electromagnetic wave where the time-varying AC wave is riding on the predefined DC bias voltage. When applied to the object or region, the superimposed time-varying frequency electromagnetic wave is able to induce a flow of ionic current having a DC component traveling in a pulsating and time-varying manner in the target object and/or in the medium and effect induced vibration of electrons and molecules of the target object and the medium. The invention also relates to a method applying a superimposed time-varying frequency electromagnetic wave to a target object or a target region. The method and the system of the invention significantly reduce the capital cost and require very low energy, with the environmentally friendly final products, and are able to result in various treatment effects simultaneously.

The present invention relates to a device for anodized oxidation of an anode element for a curved X-ray grating, the device (10) comprising: an anode element (12); a cathode element (14); an electrolytic medium (16); a conductor element (18); and a carrier element (20); wherein the anode element (12) comprises a first side (11) and a second side (13), wherein the second side (13) faces opposite to the first side (11); wherein the carrier element (20) comprises a curved surface section (21) that extends along a curvature around a center of curvature (30); wherein the carrier element (20) is configured to receive the second side (13) of the anode element (12) for attaching the conductor element (18) to the first side (11) of the anode element (12); wherein the curved surface section (21) is configured to receive the conductor element (18) after detaching the second side (13) of the anode element (12) from the carrier element (20); wherein the electrolytic medium (16) is configured to connect the anode element (12) and the cathode element (14); wherein the cathode element (14) in conjunction with the anode element (12) and the electrolyte medium (16) is configured to generate at least one group of electric field lines (26) that define a plane (31, 33, 35, 37, 39), wherein at least a straight extrapolation (32) of the group of electric field lines intersect the center of curvature, wherein the generation of the at least one group of electric field lines (26) results in an anodized oxidation of the anode element (12) on the curved surface section (21). The invention provides a device (10) that avoids the risk of damaging the grating structures and getting a low yield.

An applicator for no-bath plasma gel electrolytic oxidation of a workpiece made of a valve metal or an alloy thereof; the applicator movable over a surface of a workpiece to be treated. The applicator including an electrode connectable to a power supply and configured for applying electric voltage to a gap between the electrode and a workpiece. A gel electrolytic medium body is mounted in a holder being in an electric contact with the electrode.

This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

The invention relates to a substrate (1) for electrical circuits comprising at least one first composite layer (2) which is produced by means of roll cladding and, after said roll cladding, has at least one copper layer (3) and an aluminium layer (4) attached thereon, wherein at least the surface side of the aluminium layer (4) facing away from the copper layer (3) is anodized for the generation of an anodic or insulating layer (5) made of aluminium oxide, and wherein the anodic or insulating layer (5) made of aluminium oxide is connected to a metal layer (7) or at least one second composite layer (2) or at least one paper-ceramic layer (11) via at least one adhesive layer (6, 6).