Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.

The invention relates to an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate, a module for chemical and/or electrolytic surface treatment of a substrate in a process fluid, a use of the electrochemical deposition system or the module for chemical and/or electrolytic surface treatment for a metal deposition application and a manufacturing method for an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate. The electrochemical deposition system comprises an anode, an anode enclosure, and a single electrolyte. The anode enclosure extends at least partially around the anode. The anode enclosure comprises a membrane. The anode and the anode enclosure are arranged in the single electrolyte. The single electrolyte is the only electrolyte of the electrochemical deposition system.

A plating apparatus 1000 includes a plating tank 10 and a substrate holder 30. The plating tank includes an anode 11 arranged in an anode chamber 13. The substrate holder is arranged above the anode chamber and configured to hold a substrate Wf as a cathode. The anode has a cylindrical shape extending in a vertical direction. The plating apparatus further includes a gas accumulation portion 60 and a discharge mechanism 70. The gas accumulation portion is disposed in the anode chamber so as to have a space between the anode and the gas accumulation portion. The gas accumulation portion covers an upper end, an outer peripheral surface, and an inner peripheral surface of the anode to accumulate a process gas generated from the anode. The discharge mechanism is configured to discharge the process gas accumulated in the gas accumulation portion to outside of the plating tank.

A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

An electroplating apparatus includes: an electroplating bath including an anode region, in which an anode electrode is arranged, a cathode region and a membrane; a head unit including a contact ring holding a wafer and configured so that a first cathode potential is applied to the contact ring during an electroplating process; a reverse potential electrode arranged adjacent to the membrane and configured so that a second cathode potential is applied to the reverse potential electrode during the electroplating process, and a reverse cathode potential is applied to the reverse potential electrode during a rinsing process, and a power supply unit configured to apply the first cathode potential and the second cathode potential during the electroplating process, and further configured to apply the reverse cathode potential and a reverse anode potential to the anode electrode during the rinsing process.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

Provided is a film forming apparatus and a film forming method for forming a metal film capable of reducing the occurrence of discoloring or alteration of the metal film caused by drying of an electrolytic solution remaining on the surface of the formed metal film. A space where the metal film exists is sealed between a housing and a mount base in a state where the solid electrolyte membrane is in contact with the metal film. The film forming apparatus includes a water supply unit supplying a wash water to the sealed space such that the wash water flows onto the surface of the metal film being in contact with the solid electrolyte membrane, and a water discharge unit discharging a wash water from the sealed space such that the wash water having flown onto the surface of the metal film flows out from the surface of the metal film.

A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.

Provided is a film forming apparatus and a film forming method capable of forming a homogenous metal film by suppressing accumulation of an electrolytic solution between a solid electrolyte membrane and a substrate. A film forming apparatus for forming a metal film includes an anode; a solid electrolyte membrane disposed between the anode and a substrate; a power supply that applies a current between the anode and the substrate; a mount base including a housing recess according to a shape of the substrate that is housed therein; and a housing including a storing chamber that stores an electrolytic solution together with the anode and having the solid electrolyte membrane attached thereto to seal the storing chamber. The mount base includes a liquid discharge portion that discharges the electrolytic solution having passed through the solid electrolyte membrane from a position facing an end face of a side wall of the housing.

Provided is a technique that ensures suppressed invasion of particles generated at a bearing of a rotation mechanism into a plating tank.

A plating apparatus 1000 includes a labyrinth seal member 50. The labyrinth seal member includes an inner labyrinth seal 53 arranged below a bearing 33 to seal the bearing, an outer labyrinth seal 54 arranged outside in a radial direction of the rotation shaft 32 with respect to the inner labyrinth seal, a delivery port 55configured to supply air to an inner seal space 60 formed inside in the radial direction with respect to the inner labyrinth seal, and a suction port 56 configured to suction air in an outer seal space 65 formed outside in the radial direction with respect to the inner labyrinth seal and inside in the radial direction with respect to the outer labyrinth seat